Improved Observation of SiC/SiO2 Oxide Charge Traps Using MOS C-V

Daniel B. Habersat; Aivars J. Lelis

doi:10.4028/www.scientific.net/MSF.679-680.366

Paper Titles

Study of the Interface Properties of TiO₂/SiO₂/SiC by Photocapacitance
p.350

Evaluation of 4H-SiC Carbon Face Gate Oxide Reliability
p.354

On the “Step Bunching” Phenomena Observed on Etched and Homoepitaxially Grown 4H Silicon Carbide
p.358

Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-Rays
p.362

Improved Observation of SiC/SiO₂ Oxide Charge Traps Using MOS C-V
p.366

Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistor
p.370

Surface Treatments of 4H-SiC Evaluated by Contact Angle Measurement
p.374

Emission Phenomenon Observation of Thermal Oxides Grown on N-Type 4H-SiC (0001) Wafer
p.378

Effect of Increased Oxide Hole Trap Density due to Nitrogen Incorporation at the SiO₂/SiC Interface on F-N Current Degradation
p.382

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Improved Observation of SiC/SiO2 Oxide Charge...

Improved Observation of SiC/SiO₂ Oxide Charge Traps Using MOS C-V

Abstract:

We have used C-V techniques to study the bias instability of 4H-SiC MOS capacitors and FETs, and compared those results to those obtained using ID-VGS. The net “back-and-forth” instability from C-V was found to exceed that of ID-VGS and matched closely with values from fast ID-VGS and midgap extrapolation, suggesting that the C-V method is more effective at measuring a “true” instability effect than ID-VGS alone. Using C-V, capacitors and large-area MOSFETs showed similar instability behavior, implying that the presence of minority carriers are not necessary to observe bias instability. One-way bias-stress C-V measurements reveal that most of the bias instability occurs under negative bias stress, whereas the opposite is observed in one-way bias stress ID-VGS measurements. Finally, post-oxidation NO annealing reduced the ΔVT bias instability for positive bias stress but does not appear to have influenced any of the other conditions.