Improved Observation of SiC/SiO2 Oxide Charge Traps Using MOS C-V

Abstract:

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We have used C-V techniques to study the bias instability of 4H-SiC MOS capacitors and FETs, and compared those results to those obtained using ID-VGS. The net “back-and-forth” instability from C-V was found to exceed that of ID-VGS and matched closely with values from fast ID-VGS and midgap extrapolation, suggesting that the C-V method is more effective at measuring a “true” instability effect than ID-VGS alone. Using C-V, capacitors and large-area MOSFETs showed similar instability behavior, implying that the presence of minority carriers are not necessary to observe bias instability. One-way bias-stress C-V measurements reveal that most of the bias instability occurs under negative bias stress, whereas the opposite is observed in one-way bias stress ID-VGS measurements. Finally, post-oxidation NO annealing reduced the ΔVT bias instability for positive bias stress but does not appear to have influenced any of the other conditions.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

366-369

DOI:

10.4028/www.scientific.net/MSF.679-680.366

Citation:

D. B. Habersat and A. J. Lelis, "Improved Observation of SiC/SiO2 Oxide Charge Traps Using MOS C-V", Materials Science Forum, Vols. 679-680, pp. 366-369, 2011

Online since:

March 2011

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$35.00

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