Emission Phenomenon Observation of Thermal Oxides Grown on N-Type 4H-SiC (0001) Wafer

Junji Senzaki; Atsushi Shimozato; Kazushige Koshikawa; Yasunori Tanaka; Kenji Fukuda; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.679-680.378

Paper Titles

Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-Rays
p.362

Improved Observation of SiC/SiO₂ Oxide Charge Traps Using MOS C-V
p.366

Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistor
p.370

Surface Treatments of 4H-SiC Evaluated by Contact Angle Measurement
p.374

Emission Phenomenon Observation of Thermal Oxides Grown on N-Type 4H-SiC (0001) Wafer
p.378

Effect of Increased Oxide Hole Trap Density due to Nitrogen Incorporation at the SiO₂/SiC Interface on F-N Current Degradation
p.382

Energy Band Structure of SiO₂/4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer
p.386

Improving Doping Efficiency of P⁺ Implanted Ions in 4H-SiC
p.393

Simulation of the Incomplete Ionization of the n-Type Dopant Phosphorus in 4H-SiC, Including Screening by Free Carriers
p.397

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Emission Phenomenon Observation of Thermal Oxides Grown on N-Type 4H-SiC (0001) Wafer

Abstract:

Photo emission phenomenon and reliability of thermal oxides grown on n-type 4H-SiC (0001) wafer have been investigated using photo emission microscope. Thermal oxides were grown by dry oxidation, and treated in nitrous oxide atmosphere as followed by hydrogen post oxidation annealing. An initial photo emission phenomenon with weak intensity exists just after stress current is applied to the thermal oxide. It is confirmed that most initial emission occurred at the same position as dielectric breakdown of the thermal oxide. Also, the initial emission phenomenon was observed in the MOS capacitors broken by extrinsic defects such as threading screw dislocations and surface defects. In addition, the photo emission due to Fowler-Nordheim tunnel current through the thermal oxide has peak intensity at 2.48 eV.