Energy Band Structure of SiO2/4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer

Heiji Watanabe; Takashi Kirino; Yusuke Kagei; James Harries; Akitaka Yoshigoe; Yuden Teraoka; Shuhei Mitani; Yuki Nakano; Takashi Nakamura; Takuji Hosoi; Takayoshi Shimura

doi:10.4028/www.scientific.net/MSF.679-680.386

Paper Titles

Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistor
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Surface Treatments of 4H-SiC Evaluated by Contact Angle Measurement
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Emission Phenomenon Observation of Thermal Oxides Grown on N-Type 4H-SiC (0001) Wafer
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Effect of Increased Oxide Hole Trap Density due to Nitrogen Incorporation at the SiO₂/SiC Interface on F-N Current Degradation
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Energy Band Structure of SiO₂/4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer
p.386

Improving Doping Efficiency of P⁺ Implanted Ions in 4H-SiC
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Simulation of the Incomplete Ionization of the n-Type Dopant Phosphorus in 4H-SiC, Including Screening by Free Carriers
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Effects of Process Variations on Silicon Carbide Devices for Extreme Environments
p.401

Two-Dimensional Modeling of Aluminum-Ion Implantation into 4H-SiC
p.405

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Energy Band Structure of SiO2/4H-SiC Interfaces...

Energy Band Structure of SiO₂/4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer

Abstract:

The energy band structure of SiO2/4H-SiC fabricated on (0001) Si- and (000-1) C-face substrates was investigated by means of synchrotron radiation x-ray photoelectron spectroscopy (SR-XPS). The band structure was found to be dependent on substrate orientation and oxide thickness due to both intrinsic and extrinsic effects that cause charge transfer at the SiO2/SiC interface. Our SR-XPS analysis revealed that the intrinsic conduction band offset of the SiO2/SiC for the C-face substrate is smaller than that for the Si-face. This means that, whereas C-face substrates exhibit high carrier mobility, a problem that is crucial to gate oxide reliability remains for SiC-based metal-oxide-semiconductor (MOS) devices owing to increased leakage current.

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Silicon Carbide and Related Materials 2010

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Materials Science Forum (Volumes 679-680)

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386-389

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.386

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Online since:

March 2011

Authors:

Heiji Watanabe, Takashi Kirino, Yusuke Kagei, James Harries, Akitaka Yoshigoe, Yuden Teraoka, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takuji Hosoi, Takayoshi Shimura

Keywords:

Conduction Band Offset, Energy Band Structure, Interface Defects, MOS Device, Synchrotron Radiation X-Ray Photoelectron Spectroscopy

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