Effect of Increased Oxide Hole Trap Density due to Nitrogen Incorporation at the SiO2/SiC Interface on F-N Current Degradation

Christian Strenger; Anton J. Bauer; Heiner Ryssel

doi:10.4028/www.scientific.net/MSF.679-680.382

Paper Titles

Improved Observation of SiC/SiO₂ Oxide Charge Traps Using MOS C-V
p.366

Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistor
p.370

Surface Treatments of 4H-SiC Evaluated by Contact Angle Measurement
p.374

Emission Phenomenon Observation of Thermal Oxides Grown on N-Type 4H-SiC (0001) Wafer
p.378

Effect of Increased Oxide Hole Trap Density due to Nitrogen Incorporation at the SiO₂/SiC Interface on F-N Current Degradation
p.382

Energy Band Structure of SiO₂/4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer
p.386

Improving Doping Efficiency of P⁺ Implanted Ions in 4H-SiC
p.393

Simulation of the Incomplete Ionization of the n-Type Dopant Phosphorus in 4H-SiC, Including Screening by Free Carriers
p.397

Effects of Process Variations on Silicon Carbide Devices for Extreme Environments
p.401

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Effect of Increased Oxide Hole Trap Density due to...

Effect of Increased Oxide Hole Trap Density due to Nitrogen Incorporation at the SiO₂/SiC Interface on F-N Current Degradation

Abstract:

Metal-oxide-semiconductor (MOS) capacitors were formed on 4H-silicon carbide (SiC) using thermally grown silicon dioxide (SiO2) as gate dielectrics, both with and without nitrogen incorporation within the oxide. The field dependence of the charge trapping properties of these structures was analyzed and linked to the observed Fowler-Nordheim current degradation. Furthermore, first considerations were presented that indicate an electron impact emission induced generation of positive oxide trapped charge.

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Materials Science Forum (Volumes 679-680)

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382-385

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.382

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Online since:

March 2011

Authors:

Christian Strenger, Anton J. Bauer, Heiner Ryssel

Keywords:

Charge, FN, Fowler-Nordheim, Interface, N₂O, Nitrogen, Oxide, Silicon Carbide (SiC), SiO₂

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