Surface Treatments of 4H-SiC Evaluated by Contact Angle Measurement

Tomoaki Hatayama; Hiroyuki Suzuki; Hidenori Koketsu; Hiroshi Yano; Takashi Fuyuki

doi:10.4028/www.scientific.net/MSF.679-680.374

Paper Titles

On the “Step Bunching” Phenomena Observed on Etched and Homoepitaxially Grown 4H Silicon Carbide
p.358

Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-Rays
p.362

Improved Observation of SiC/SiO₂ Oxide Charge Traps Using MOS C-V
p.366

Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistor
p.370

Surface Treatments of 4H-SiC Evaluated by Contact Angle Measurement
p.374

Emission Phenomenon Observation of Thermal Oxides Grown on N-Type 4H-SiC (0001) Wafer
p.378

Effect of Increased Oxide Hole Trap Density due to Nitrogen Incorporation at the SiO₂/SiC Interface on F-N Current Degradation
p.382

Energy Band Structure of SiO₂/4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer
p.386

Improving Doping Efficiency of P⁺ Implanted Ions in 4H-SiC
p.393

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Surface Treatments of 4H-SiC Evaluated by Contact Angle Measurement

Abstract:

Surface properties of the 4H-SiC (0001) Si faces could be evaluated by the contact angle measurements with water droplet method, X-ray photoelectron spectroscopy and an atomic force microscope. The contact angles do not depend on the surface roughness under 3nm. The substrate surfaces with the contact angles over 30o will be terminated by hydrogen related species. The contact angles around 20o on 4H-SiC is caused by the removal of oxide layer with fluoride acid and terminated subsequently by the -CF species on the surface. The hydrophile surface of 4H-SiC is caused by the formation of chemical oxide layer as well as the case of the silicon wafers.