Surface properties of the 4H-SiC (0001) Si faces could be evaluated by the contact angle measurements with water droplet method, X-ray photoelectron spectroscopy and an atomic force microscope. The contact angles do not depend on the surface roughness under 3nm. The substrate surfaces with the contact angles over 30o will be terminated by hydrogen related species. The contact angles around 20o on 4H-SiC is caused by the removal of oxide layer with fluoride acid and terminated subsequently by the -CF species on the surface. The hydrophile surface of 4H-SiC is caused by the formation of chemical oxide layer as well as the case of the silicon wafers.