Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistor
We present an electrically detected electron-spin-resonance (ESR) study on SiO2-SiC interface regions of n-channel lateral 4H-SiC MOSFETs with hydrogen annealing. This characterization technique can reveal electrically active defects that interact with channel currents of the MOSFETs. The defects were observed at 20 K, and were labeled “PH0” and “PH1”, one of which (PH1) exhibited a 1H hyperfine splitting of 5.3 mT.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
T. Umeda et al., "Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistor", Materials Science Forum, Vols. 679-680, pp. 370-373, 2011