Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistor

T. Umeda; K. Esaki; Ryouji Kosugi; Kenji Fukuda; Norio Morishita; Takeshi Ohshima; Junichi Isoya

doi:10.4028/www.scientific.net/MSF.679-680.370

Paper Titles

Evaluation of 4H-SiC Carbon Face Gate Oxide Reliability
p.354

On the “Step Bunching” Phenomena Observed on Etched and Homoepitaxially Grown 4H Silicon Carbide
p.358

Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-Rays
p.362

Improved Observation of SiC/SiO₂ Oxide Charge Traps Using MOS C-V
p.366

Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistor
p.370

Surface Treatments of 4H-SiC Evaluated by Contact Angle Measurement
p.374

Emission Phenomenon Observation of Thermal Oxides Grown on N-Type 4H-SiC (0001) Wafer
p.378

Effect of Increased Oxide Hole Trap Density due to Nitrogen Incorporation at the SiO₂/SiC Interface on F-N Current Degradation
p.382

Energy Band Structure of SiO₂/4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer
p.386

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Electrically Detected ESR Study of Interface...

Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistor

Abstract:

We present an electrically detected electron-spin-resonance (ESR) study on SiO2-SiC interface regions of n-channel lateral 4H-SiC MOSFETs with hydrogen annealing. This characterization technique can reveal electrically active defects that interact with channel currents of the MOSFETs. The defects were observed at 20 K, and were labeled “PH0” and “PH1”, one of which (PH1) exhibited a 1H hyperfine splitting of 5.3 mT.

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Materials Science Forum (Volumes 679-680)

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370-373

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.370

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Online since:

March 2011

Authors:

T. Umeda, K. Esaki, Ryouji Kosugi, Kenji Fukuda, Norio Morishita, Takeshi Ohshima, Junichi Isoya

Keywords:

4H-SiC MOSFET, Dangling Bond, EDMR, ESR, Hydrogen, SiO₂-SiC Interface

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