Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistor

Abstract:

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We present an electrically detected electron-spin-resonance (ESR) study on SiO2-SiC interface regions of n-channel lateral 4H-SiC MOSFETs with hydrogen annealing. This characterization technique can reveal electrically active defects that interact with channel currents of the MOSFETs. The defects were observed at 20 K, and were labeled “PH0” and “PH1”, one of which (PH1) exhibited a 1H hyperfine splitting of 5.3 mT.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

370-373

DOI:

10.4028/www.scientific.net/MSF.679-680.370

Citation:

T. Umeda et al., "Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistor", Materials Science Forum, Vols. 679-680, pp. 370-373, 2011

Online since:

March 2011

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$35.00

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