Evaluation of 4H-SiC Carbon Face Gate Oxide Reliability

Jody Fronheiser; Aveek Chatterjee; Ulrike Grossner; Kevin Matocha; Vinayak Tilak; Liang Chun Yu

doi:10.4028/www.scientific.net/MSF.679-680.354

Paper Titles

Shallow Traps at P-Doped SiO₂/4H-SiC(0001) Interface
p.338

Investigation of Surface and Interface Morphology of Thermally Grown SiO₂ Dielectrics on 4H-SiC(0001) Substrates
p.342

Non-Nitridated Oxides: Abnormal Behaviour of N-4H-SiC/SiO₂ Capacitors at Low Temperature Caused by near Interface States
p.346

Study of the Interface Properties of TiO₂/SiO₂/SiC by Photocapacitance
p.350

Evaluation of 4H-SiC Carbon Face Gate Oxide Reliability
p.354

On the “Step Bunching” Phenomena Observed on Etched and Homoepitaxially Grown 4H Silicon Carbide
p.358

Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-Rays
p.362

Improved Observation of SiC/SiO₂ Oxide Charge Traps Using MOS C-V
p.366

Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistor
p.370

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Evaluation of 4H-SiC Carbon Face Gate Oxide Reliability

Abstract:

The gate oxide reliability and channel mobility of carbon face (000-1) 4H Silicon Carbide (SiC) MOSFETs are investigated. Several gate oxidation processes including dry oxygen, pyrogenic steam, and nitrided oxides were investigated utilizing MOS capacitors for time dependent dielectric breakdown (TDDB), dielectric field strength, and MOSFETs for inversion layer mobility measurements. The results show the C-face can achieve reliability similar to the Si-face, however this is highly dependent on the gate oxide process. The reliability is inversely related to the field effect mobility where other research groups report that pyrogenic steam yields the highest electron mobility while this work shows it has weakest oxide in terms of dielectric strength and shortest time to failure.