Investigation of Surface and Interface Morphology of Thermally Grown SiO2 Dielectrics on 4H-SiC(0001) Substrates

Takuji Hosoi; Kohei Konzono; Yusuke Uenishi; Shuhei Mitani; Yuki Nakano; Takashi Nakamura; Takayoshi Shimura; Heiji Watanabe

doi:10.4028/www.scientific.net/MSF.679-680.342

Paper Titles

The Influence of Excess Nitrogen, on the Electrical Properties of the 4H-SiC/SiO₂ Interface
p.326

Microscopic Examination of SiO₂/4H-SiC Interfaces
p.330

Reduction in the Density of Interface States at the SiO₂/4H-SiC Interface after Dry Oxidation in the Presence of Potassium
p.334

Shallow Traps at P-Doped SiO₂/4H-SiC(0001) Interface
p.338

Investigation of Surface and Interface Morphology of Thermally Grown SiO₂ Dielectrics on 4H-SiC(0001) Substrates
p.342

Non-Nitridated Oxides: Abnormal Behaviour of N-4H-SiC/SiO₂ Capacitors at Low Temperature Caused by near Interface States
p.346

Study of the Interface Properties of TiO₂/SiO₂/SiC by Photocapacitance
p.350

Evaluation of 4H-SiC Carbon Face Gate Oxide Reliability
p.354

On the “Step Bunching” Phenomena Observed on Etched and Homoepitaxially Grown 4H Silicon Carbide
p.358

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Investigation of Surface and Interface Morphology...

Investigation of Surface and Interface Morphology of Thermally Grown SiO₂ Dielectrics on 4H-SiC(0001) Substrates

Abstract:

Surface and interface morphology of thermal oxides grown on 4-off (0001) oriented 4H-SiC substrates by dry O2 oxidation was investigated using atomic force microscopy (AFM) and transmission electron microscopy (TEM). When step bunching was present on a starting wafer, oxide surface roughness was much larger than that of the starting 4H-SiC surface. This is attributed to the difference in oxidation rate between the terrace and the step face. A step-terrace structure on 4H-SiC(0001) was mostly preserved on the oxide surface, but pronounced oxidation occurred around the step bunching. Cross-sectional TEM observation showed that the SiO2/4H-SiC interface became smoother than the initial surface and the thickness of the SiO2 layer fluctuated. Such SiO2 thickness fluctuation may cause a local electric field concentration when a voltage was applied to the oxide, thus degrading the dielectric breakdown characteristics of 4H-SiC metal-oxide-semiconductor (MOS) devices.

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Materials Science Forum (Volumes 679-680)

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342-345

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.342

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Online since:

March 2011

Authors:

Takuji Hosoi, Kohei Konzono, Yusuke Uenishi, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takayoshi Shimura, Heiji Watanabe

Keywords:

4H-SiC (0001), Step Bunching, Surface Morphology, Thermal Oxidation

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