Microscopic Examination of SiO2/4H-SiC Interfaces

Tetsuo Hatakeyama; Hirofumi  Matsuhata; T. Suzuki; Takashi Shinohe; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.679-680.330

Paper Titles

Investigation of Photoluminescence Emission of Basal Plane Frank-Type Defects in 4H-SiC Epilayers
p.310

Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers
p.314

Understanding the Inversion-Layer Properties of the 4H-SiC/SiO₂ Interface
p.318

The Influence of Excess Nitrogen, on the Electrical Properties of the 4H-SiC/SiO₂ Interface
p.326

Microscopic Examination of SiO₂/4H-SiC Interfaces
p.330

Reduction in the Density of Interface States at the SiO₂/4H-SiC Interface after Dry Oxidation in the Presence of Potassium
p.334

Shallow Traps at P-Doped SiO₂/4H-SiC(0001) Interface
p.338

Investigation of Surface and Interface Morphology of Thermally Grown SiO₂ Dielectrics on 4H-SiC(0001) Substrates
p.342

Non-Nitridated Oxides: Abnormal Behaviour of N-4H-SiC/SiO₂ Capacitors at Low Temperature Caused by near Interface States
p.346

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Microscopic Examination of SiO2/4H-SiC Interfaces

Microscopic Examination of SiO₂/4H-SiC Interfaces

Abstract:

SiO2/4H-SiC interfaces are examined by high-resolution transmission electron microscopy (HRTEM), high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM), and spatially resolved electron energy-loss spectroscopy (EELS). HRTEM and HAADF-STEM images of SiO2/4H-SiC interfaces reveal that abrupt interfaces are formed irrespective of the fabrication conditions. Transition regions around the interfaces reported by Zheleva et al. were not observed. Using EELS, profiles of the C/Si and O/Si ratios across an interface were measured. Our measurements did not reveal a C-rich region on the SiC side of the interface, which was reported by Zheleva et al.

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Materials Science Forum (Volumes 679-680)

Pages:

330-333

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.330

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Online since:

March 2011

Authors:

Tetsuo Hatakeyama, Hirofumi Matsuhata, T. Suzuki, Takashi Shinohe, Hajime Okumura

Keywords:

CVD, Dislocation, EELS, Gate Oxide, Interface, MOS, MOSFET, Silicon Carbide (SiC), TEM

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References

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