Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers

Teddy Robert; Maya Marinova; Sandrine Juillaguet; Anne Henry; Efstathios K. Polychroniadis; Jean Camassel

doi:10.4028/www.scientific.net/MSF.679-680.314

Paper Titles

New Separation Method of Threading Dislocations in 4H-SiC Epitaxial Layer by Molten KOH Etching
p.298

Impact of Carrier Lifetimes on Non-Destructive Mapping of Dislocations in 4H-SiC Epilayers
p.302

Correlation between Thermal Stress and Formation of Interfacial Dislocations during 4H-SiC Epitaxy and Thermal Annealing
p.306

Investigation of Photoluminescence Emission of Basal Plane Frank-Type Defects in 4H-SiC Epilayers
p.310

Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers
p.314

Understanding the Inversion-Layer Properties of the 4H-SiC/SiO₂ Interface
p.318

The Influence of Excess Nitrogen, on the Electrical Properties of the 4H-SiC/SiO₂ Interface
p.326

Microscopic Examination of SiO₂/4H-SiC Interfaces
p.330

Reduction in the Density of Interface States at the SiO₂/4H-SiC Interface after Dry Oxidation in the Presence of Potassium
p.334

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Effect of Inter-Well Coupling between 3C and 6H...

Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers

Abstract:

Both 3C and 6H stacking faults have been observed in a low doped 4H-SiC epitaxial layer grown in a hot-wall CVD reactor on a heavily doped (off-axis) 4H-SiC substrate. They appear differently on the different parts of sample, with energetic dispersion ranging from 3.01 eV to 2.52 eV. Since they behave as natural type-II quantum wells in the 4H-SiC matrix, the thickness dependence of the excitonic recombination is investigated using the standard effective mass approximation. The results are discussed in terms of built-in electric field and inter-well coupling effects.

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Materials Science Forum (Volumes 679-680)

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314-317

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.314

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Online since:

March 2011

Authors:

Teddy Robert, Maya Marinova, Sandrine Juillaguet, Anne Henry, Efstathios K. Polychroniadis, Jean Camassel

Keywords:

High Resolution Transmission Electron Microscopy (HRTEM), Inter-Well Coupling, Low Temperature Photoluminescence, Quantum Well Approach, Silicon Carbide Stacking Faults

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