Impact of Carrier Lifetimes on Non-Destructive Mapping of Dislocations in 4H-SiC Epilayers

Gan Feng; Jun Suda; Tsunenobu Kimoto

doi:10.4028/www.scientific.net/MSF.679-680.302

Paper Titles

Etch Pits on 4H-SiC Surface Produced by ClF₃ Gas
p.286

Dislocation Revelation in Highly Doped N-Type 4H-SiC by Molten KOH Etching with Na₂O₂ Additive
p.290

Dislocation Analysis in Highly Doped n-Type 4H-SiC by Using Electron Beam Induced Current and KOH+Na₂O₂ Etching
p.294

New Separation Method of Threading Dislocations in 4H-SiC Epitaxial Layer by Molten KOH Etching
p.298

Impact of Carrier Lifetimes on Non-Destructive Mapping of Dislocations in 4H-SiC Epilayers
p.302

Correlation between Thermal Stress and Formation of Interfacial Dislocations during 4H-SiC Epitaxy and Thermal Annealing
p.306

Investigation of Photoluminescence Emission of Basal Plane Frank-Type Defects in 4H-SiC Epilayers
p.310

Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers
p.314

Understanding the Inversion-Layer Properties of the 4H-SiC/SiO₂ Interface
p.318

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Impact of Carrier Lifetimes on Non-Destructive...

Impact of Carrier Lifetimes on Non-Destructive Mapping of Dislocations in 4H-SiC Epilayers

Abstract:

Dislocations in 4H-SiC epilayers were imaged nondestructively by means of micro photoluminescence (-PL) mapping at room temperature. The one-to-one correspondence between the individual dislocations and the -PL mapping contrast has been consistently obtained. By analyzing the reduction of the intensity in the -PL mapping image performed at 390 nm (near band-edge emission), we were able to distinguish threading screw dislocations and threading edge dislocations. Furthermore, the contrast of dislocations in PL-intensity mapping image greatly depends on the carrier lifetimes of the 4H-SiC epilayers. Lifetimes longer than 0.5 s are essential to obtain a discernible contrast for the individual dislocations.

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Materials Science Forum (Volumes 679-680)

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302-305

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https://doi.org/10.4028/www.scientific.net/MSF.679-680.302

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Online since:

March 2011

Authors:

Gan Feng, Jun Suda, Tsunenobu Kimoto

Keywords:

Carrier Lifetime, Dislocation, Lifetime Control, Photoluminescence Mapping

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