Impact of Carrier Lifetimes on Non-Destructive Mapping of Dislocations in 4H-SiC Epilayers

Abstract:

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Dislocations in 4H-SiC epilayers were imaged nondestructively by means of micro photoluminescence (-PL) mapping at room temperature. The one-to-one correspondence between the individual dislocations and the -PL mapping contrast has been consistently obtained. By analyzing the reduction of the intensity in the -PL mapping image performed at 390 nm (near band-edge emission), we were able to distinguish threading screw dislocations and threading edge dislocations. Furthermore, the contrast of dislocations in PL-intensity mapping image greatly depends on the carrier lifetimes of the 4H-SiC epilayers. Lifetimes longer than 0.5 s are essential to obtain a discernible contrast for the individual dislocations.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

302-305

DOI:

10.4028/www.scientific.net/MSF.679-680.302

Citation:

G. Feng et al., "Impact of Carrier Lifetimes on Non-Destructive Mapping of Dislocations in 4H-SiC Epilayers", Materials Science Forum, Vols. 679-680, pp. 302-305, 2011

Online since:

March 2011

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$35.00

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