Etch Pits on 4H-SiC Surface Produced by ClF3 Gas
Selective etching on the surface of single-crystalline 4H-SiC was performed using ClF3 gas at 700 K and at atmospheric pressure in a cold wall reactor. The etch pits at the Si-face and C-face 4H-SiC surface may have relationship with the threading edge and screw dislocation.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
H. Habuka et al., "Etch Pits on 4H-SiC Surface Produced by ClF3 Gas", Materials Science Forum, Vols. 679-680, pp. 286-289, 2011