Etch Pits on 4H-SiC Surface Produced by ClF3 Gas

Hitoshi Habuka; Kazuchika Furukawa; Keiko Tanaka; Yusuke Katsumi; Shinji Iizuka; Katsuya Fukae; Tomohisa Kato

doi:10.4028/www.scientific.net/MSF.679-680.286

Paper Titles

Formation Mechanism of Stacking Faults in PVT 4H-SiC Created by Deflection of Threading Dislocations with Burgers Vector c+a
p.269

Electrical Activity of Structural Defects in 3C-SiC
p.273

Efficient Image Segmentation for Detection of Dislocations in High Resolution Light Microscope Images of SiC Wafers
p.277

Propagation of Stacking Faults in 3C-SiC
p.282

Etch Pits on 4H-SiC Surface Produced by ClF₃ Gas
p.286

Dislocation Revelation in Highly Doped N-Type 4H-SiC by Molten KOH Etching with Na₂O₂ Additive
p.290

Dislocation Analysis in Highly Doped n-Type 4H-SiC by Using Electron Beam Induced Current and KOH+Na₂O₂ Etching
p.294

New Separation Method of Threading Dislocations in 4H-SiC Epitaxial Layer by Molten KOH Etching
p.298

Impact of Carrier Lifetimes on Non-Destructive Mapping of Dislocations in 4H-SiC Epilayers
p.302

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Etch Pits on 4H-SiC Surface Produced by ClF3 Gas

Etch Pits on 4H-SiC Surface Produced by ClF₃ Gas

Abstract:

Selective etching on the surface of single-crystalline 4H-SiC was performed using ClF3 gas at 700 K and at atmospheric pressure in a cold wall reactor. The etch pits at the Si-face and C-face 4H-SiC surface may have relationship with the threading edge and screw dislocation.

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Materials Science Forum (Volumes 679-680)

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286-289

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.286

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Online since:

March 2011

Authors:

Hitoshi Habuka, Kazuchika Furukawa, Keiko Tanaka, Yusuke Katsumi, Shinji Iizuka, Katsuya Fukae, Tomohisa Kato

Keywords:

Chlorine Trifluoride Gas, Etching, Silicon Carbide (SiC)

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