Etch Pits on 4H-SiC Surface Produced by ClF3 Gas

Abstract:

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Selective etching on the surface of single-crystalline 4H-SiC was performed using ClF3 gas at 700 K and at atmospheric pressure in a cold wall reactor. The etch pits at the Si-face and C-face 4H-SiC surface may have relationship with the threading edge and screw dislocation.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

286-289

DOI:

10.4028/www.scientific.net/MSF.679-680.286

Citation:

H. Habuka et al., "Etch Pits on 4H-SiC Surface Produced by ClF3 Gas", Materials Science Forum, Vols. 679-680, pp. 286-289, 2011

Online since:

March 2011

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Price:

$35.00

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