Efficient Image Segmentation for Detection of Dislocations in High Resolution Light Microscope Images of SiC Wafers

Abstract:

Article Preview

The determination of dislocation density and in particular the dislocation distribution in SiC wafers is of particular interest for SiC crystal growth development and production. We present an image recognition tool allowing the wafer analysis with specific needs for SiC. In the first stage of expansion, micropipes are selected and counted from SiC wafers that have been etched by KOH.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

277-281

DOI:

10.4028/www.scientific.net/MSF.679-680.277

Citation:

H. Karpinski et al., "Efficient Image Segmentation for Detection of Dislocations in High Resolution Light Microscope Images of SiC Wafers", Materials Science Forum, Vols. 679-680, pp. 277-281, 2011

Online since:

March 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.