Efficient Image Segmentation for Detection of Dislocations in High Resolution Light Microscope Images of SiC Wafers

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Abstract:

The determination of dislocation density and in particular the dislocation distribution in SiC wafers is of particular interest for SiC crystal growth development and production. We present an image recognition tool allowing the wafer analysis with specific needs for SiC. In the first stage of expansion, micropipes are selected and counted from SiC wafers that have been etched by KOH.

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Periodical:

Materials Science Forum (Volumes 679-680)

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277-281

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Online since:

March 2011

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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