Iron-Related Defect Centers in 3C-SiC

Thanos Tsirimpis; S. Beljakova; Bernd Zippelius; Heiko B. Weber; Gerhard Pensl; M. Krieger; Hiroyuki Nagasawa; Takamitsu Kawahara; Naoki Hatta; Kuniaki Yagi; Hidetsugu Uchida; Motoki Kobayashi; Adolf Schöner

doi:10.4028/www.scientific.net/MSF.679-680.265

Paper Titles

Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC
p.249

Electrically Active Defects in Electron Irradiated P-Type 6H-SiC
p.253

Large-Scale Electronic Structure Calculations of Vacancies in 4H-SiC Using the Heyd-Scuseria-Ernzerhof Screened Hybrid Density Functional
p.261

Formation Mechanism of Stacking Faults in PVT 4H-SiC Created by Deflection of Threading Dislocations with Burgers Vector c+a
p.269

Electrical Activity of Structural Defects in 3C-SiC
p.273

Efficient Image Segmentation for Detection of Dislocations in High Resolution Light Microscope Images of SiC Wafers
p.277

Propagation of Stacking Faults in 3C-SiC
p.282

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Iron-Related Defect Centers in 3C-SiC

Iron-Related Defect Centers in 3C-SiC

Abstract:

p-type 3C-SiC samples were implanted by iron (Fe) and investigated by means of deep level transient spectroscopy (DLTS). Corresponding argon (Ar) profiles with similar implantation damage were implanted in order to distinguish between iron-related defects and defects caused by implantation damage. Two donor-like iron-related centers were identified in p-type 3C-SiC.