Iron-Related Defect Centers in 3C-SiC

Abstract:

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p-type 3C-SiC samples were implanted by iron (Fe) and investigated by means of deep level transient spectroscopy (DLTS). Corresponding argon (Ar) profiles with similar implantation damage were implanted in order to distinguish between iron-related defects and defects caused by implantation damage. Two donor-like iron-related centers were identified in p-type 3C-SiC.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

265-268

DOI:

10.4028/www.scientific.net/MSF.679-680.265

Citation:

T. Tsirimpis et al., "Iron-Related Defect Centers in 3C-SiC", Materials Science Forum, Vols. 679-680, pp. 265-268, 2011

Online since:

March 2011

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Price:

$35.00

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