Iron-Related Defect Centers in 3C-SiC
p-type 3C-SiC samples were implanted by iron (Fe) and investigated by means of deep level transient spectroscopy (DLTS). Corresponding argon (Ar) profiles with similar implantation damage were implanted in order to distinguish between iron-related defects and defects caused by implantation damage. Two donor-like iron-related centers were identified in p-type 3C-SiC.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
T. Tsirimpis et al., "Iron-Related Defect Centers in 3C-SiC", Materials Science Forum, Vols. 679-680, pp. 265-268, 2011