Iron-Related Defect Centers in 4H-SiC Detected by Deep Level Transient Spectroscopy
Fe-implanted n-/p-type 4H-SiC samples were investigated by deep level transient spectroscopy (DLTS). In order to be able to separate Fe-related defect centers from defects caused by implantation damage, a corresponding Ar-profile was implanted. No Fe-related defects were observed in n-type 4H-SiC, while two Fe-related centers could be identified in p-type 4H-SiC. The electrical behavior of these centers is donor-like.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
L. Trapaidze et al., "Iron-Related Defect Centers in 4H-SiC Detected by Deep Level Transient Spectroscopy", Materials Science Forum, Vols. 679-680, pp. 257-260, 2011