Iron-Related Defect Centers in 4H-SiC Detected by Deep Level Transient Spectroscopy

Lia Trapaidze; R. Hollweck; Svetlana Beljakowa; Bernd Zippelius; Heiko B. Weber; Gerhard Pensl; M. Krieger

doi:10.4028/www.scientific.net/MSF.679-680.257

Paper Titles

Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers
p.241

Donor-Acceptor Pair Luminescence of P-Al and N-Al Pairs in 3C-SiC and the Ionization Energy of the P Donor
p.245

Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC
p.249

Electrically Active Defects in Electron Irradiated P-Type 6H-SiC
p.253

Large-Scale Electronic Structure Calculations of Vacancies in 4H-SiC Using the Heyd-Scuseria-Ernzerhof Screened Hybrid Density Functional
p.261

Formation Mechanism of Stacking Faults in PVT 4H-SiC Created by Deflection of Threading Dislocations with Burgers Vector c+a
p.269

Electrical Activity of Structural Defects in 3C-SiC
p.273

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Iron-Related Defect Centers in 4H-SiC Detected by...

Iron-Related Defect Centers in 4H-SiC Detected by Deep Level Transient Spectroscopy

Abstract:

Fe-implanted n-/p-type 4H-SiC samples were investigated by deep level transient spectroscopy (DLTS). In order to be able to separate Fe-related defect centers from defects caused by implantation damage, a corresponding Ar-profile was implanted. No Fe-related defects were observed in n-type 4H-SiC, while two Fe-related centers could be identified in p-type 4H-SiC. The electrical behavior of these centers is donor-like.

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Materials Science Forum (Volumes 679-680)

Pages:

257-260

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.257

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Online since:

March 2011

Authors:

Lia Trapaidze, R. Hollweck, Svetlana Beljakowa, Bernd Zippelius, Heiko B. Weber, Gerhard Pensl, M. Krieger

Keywords:

DLTS, Iron-Implantation, Iron-Related Defect Centers

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