Iron-Related Defect Centers in 4H-SiC Detected by Deep Level Transient Spectroscopy

Abstract:

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Fe-implanted n-/p-type 4H-SiC samples were investigated by deep level transient spectroscopy (DLTS). In order to be able to separate Fe-related defect centers from defects caused by implantation damage, a corresponding Ar-profile was implanted. No Fe-related defects were observed in n-type 4H-SiC, while two Fe-related centers could be identified in p-type 4H-SiC. The electrical behavior of these centers is donor-like.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

257-260

DOI:

10.4028/www.scientific.net/MSF.679-680.257

Citation:

L. Trapaidze et al., "Iron-Related Defect Centers in 4H-SiC Detected by Deep Level Transient Spectroscopy", Materials Science Forum, Vols. 679-680, pp. 257-260, 2011

Online since:

March 2011

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Price:

$35.00

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