Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC

Franziska Christine Beyer; Carl G. Hemmingsson; Henrik Pedersen; Anne Henry; Junichi Isoya; Norio Morishita; Takeshi Ohshima; Erik Janzén

doi:10.4028/www.scientific.net/MSF.679-680.249

Paper Titles

Enhanced Annealing of MeV Ion Implantation Damage in N-Type 4H Silicon Carbide by Thermal Oxidation
p.233

Using Intrinsic Defect Spectra in 4H SiC as Imbedded Thermometers in the Temperature Range from 100°C to 1500°C
p.237

Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers
p.241

Donor-Acceptor Pair Luminescence of P-Al and N-Al Pairs in 3C-SiC and the Ionization Energy of the P Donor
p.245

Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC
p.249

Electrically Active Defects in Electron Irradiated P-Type 6H-SiC
p.253

Large-Scale Electronic Structure Calculations of Vacancies in 4H-SiC Using the Heyd-Scuseria-Ernzerhof Screened Hybrid Density Functional
p.261

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Observation of Bistable Defects in Electron...

Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC

Abstract:

DLTS measurements show bistable behavior of the previously reported EH5 peak in low- and high-energy electron irradiation 4H-SiC. Both reconfiguration processes (A ! B and B ! A) take place above 700 ±C. By isothermal annealing, the reconfiguration rates were determined and the reconfiguration energy was calculated to EA = 2.4±0.2 eV. Since the defect is present already after low-energy electron irradiation, which mainly affects the C atom in SiC, the EH5 peak may be related to defects associated with C-vacancies or C-interstitials

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Silicon Carbide and Related Materials 2010

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Periodical:

Materials Science Forum (Volumes 679-680)

Pages:

249-252

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.249

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Online since:

March 2011

Authors:

Franziska Christine Beyer, Carl G. Hemmingsson, Henrik Pedersen, Anne Henry, Junichi Isoya, Norio Morishita, Takeshi Ohshima, Erik Janzén

Keywords:

Bistability, DLTS, Electron Irradiation, Metastable Defect

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