Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC

Abstract:

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DLTS measurements show bistable behavior of the previously reported EH5 peak in low- and high-energy electron irradiation 4H-SiC. Both reconfiguration processes (A ! B and B ! A) take place above 700 ±C. By isothermal annealing, the reconfiguration rates were determined and the reconfiguration energy was calculated to EA = 2.4±0.2 eV. Since the defect is present already after low-energy electron irradiation, which mainly affects the C atom in SiC, the EH5 peak may be related to defects associated with C-vacancies or C-interstitials

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

249-252

DOI:

10.4028/www.scientific.net/MSF.679-680.249

Citation:

F. C. Beyer et al., "Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC", Materials Science Forum, Vols. 679-680, pp. 249-252, 2011

Online since:

March 2011

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$35.00

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