Using Intrinsic Defect Spectra in 4H SiC as Imbedded Thermometers in the Temperature Range from 100°C to 1500°C

Fei Yan; A. Espenlaub; Robert P. Devaty; Takeshi Ohshima; Wolfgang J. Choyke

doi:10.4028/www.scientific.net/MSF.679-680.237

Paper Titles

Comparison between the Piezoresistive Properties of a-SiC Films Obtained by PECVD and Magnetron Sputtering
p.217

Raman Study of Bulk Mobility in 3C-SiC Heteroepitaxy
p.221

Defects in SiC: Theory
p.225

Enhanced Annealing of MeV Ion Implantation Damage in N-Type 4H Silicon Carbide by Thermal Oxidation
p.233

Using Intrinsic Defect Spectra in 4H SiC as Imbedded Thermometers in the Temperature Range from 100°C to 1500°C
p.237

Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers
p.241

Donor-Acceptor Pair Luminescence of P-Al and N-Al Pairs in 3C-SiC and the Ionization Energy of the P Donor
p.245

Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC
p.249

Electrically Active Defects in Electron Irradiated P-Type 6H-SiC
p.253

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Using Intrinsic Defect Spectra in 4H SiC as Imbedded Thermometers in the Temperature Range from 100°C to 1500°C

Abstract:

Low doped epitaxial films of 4H SiC irradiated at 1 MeV and electron fluences of 1×1015 cm-2, 3×1015 cm-2 and 1×1016 cm-2 have been used to measure temperatures in two temperature intervals: 580°C to 640°C and 1220°C to 1320°C. Possible accuracy of the temperature measurements is judged to be better than 10 degrees Centigrade. Similar measurements should be possible from 100°C to 1500°C.