Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers

Abstract:

The current communication focuses on the influence of a post-growth annealing on the evolution of defects inside (111) 3C-SiC layers grown by the Vapour Liquid Solid (VLS) mechanism in SiGe melts on Si-face on- and off axis 6H-SiC substrates. The layers are studied by Transmission Electron Microscopy (TEM) and Low Temperature Photoluminescence (LTPL). It was found that the growth on off-axis substrates results in a 3C-SiC layer containing mainly stacking faults (SFs) and microtwins (MT). The density of MT lamellae and SFs reduces in the layers grown on the on-axis substrate compared to off-axis substrate. In the layers grown on off-axis substrates the annealing strongly reduces the density of SFs inclined to the 3C/6H-SiC interface. Additionally, 3C to 6H polytypic transformation appears only at the interface, most probably starting from substrate step edges. This was only seen on off-axis seed since the step edges are more.

• Periodical: Materials Science Forum (Volumes 679-680)
• Pages: 241-244
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.679-680.241
• Online since: March 2011
• Authors: Maya Marinova, Ariadne Andreadou, Jian Wu Sun, Jean Lorenzzi, Alkyoni Mantzari, Georgios Zoulis, Nikoletta Jegenyes, Sandrine Juillaguet, Véronique Soulière, Gabriel Ferro, Jean Camassel, Efstathios K. Polychroniadis
• Keywords: 3C-SiC, Defect, LTPL, Post-Growth Annealing, TEM, VLS

References

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