Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers

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The current communication focuses on the influence of a post-growth annealing on the evolution of defects inside (111) 3C-SiC layers grown by the Vapour Liquid Solid (VLS) mechanism in SiGe melts on Si-face on- and off axis 6H-SiC substrates. The layers are studied by Transmission Electron Microscopy (TEM) and Low Temperature Photoluminescence (LTPL). It was found that the growth on off-axis substrates results in a 3C-SiC layer containing mainly stacking faults (SFs) and microtwins (MT). The density of MT lamellae and SFs reduces in the layers grown on the on-axis substrate compared to off-axis substrate. In the layers grown on off-axis substrates the annealing strongly reduces the density of SFs inclined to the 3C/6H-SiC interface. Additionally, 3C to 6H polytypic transformation appears only at the interface, most probably starting from substrate step edges. This was only seen on off-axis seed since the step edges are more.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

241-244

DOI:

10.4028/www.scientific.net/MSF.679-680.241

Citation:

M. Marinova et al., "Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers", Materials Science Forum, Vols. 679-680, pp. 241-244, 2011

Online since:

March 2011

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$35.00

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