Electrically Active Defects in Electron Irradiated P-Type 6H-SiC
An isochronal annealing in the 100-1200 oC temperature range was carried out on 116 and 400 keV electron irradiated Al-doped 6H-SiC epitaxial layers. Electrical characterization of the epilayers, performed by Fourier-Transform Deep Level Transient Spectroscopy, revealed the presence of six levels in the band gap, in the 0.1-1.6 eV energy range. Their nature is discussed in the light of previous experimental and theoretical works found in the literature.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
G. Alfieri and T. Kimoto, "Electrically Active Defects in Electron Irradiated P-Type 6H-SiC", Materials Science Forum, Vols. 679-680, pp. 253-256, 2011