Electrically Active Defects in Electron Irradiated P-Type 6H-SiC

Giovanni Alfieri; Tsunenobu Kimoto

doi:10.4028/www.scientific.net/MSF.679-680.253

Paper Titles

Using Intrinsic Defect Spectra in 4H SiC as Imbedded Thermometers in the Temperature Range from 100°C to 1500°C
p.237

Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers
p.241

Donor-Acceptor Pair Luminescence of P-Al and N-Al Pairs in 3C-SiC and the Ionization Energy of the P Donor
p.245

Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC
p.249

Electrically Active Defects in Electron Irradiated P-Type 6H-SiC
p.253

Large-Scale Electronic Structure Calculations of Vacancies in 4H-SiC Using the Heyd-Scuseria-Ernzerhof Screened Hybrid Density Functional
p.261

Formation Mechanism of Stacking Faults in PVT 4H-SiC Created by Deflection of Threading Dislocations with Burgers Vector c+a
p.269

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Electrically Active Defects in Electron Irradiated P-Type 6H-SiC

Abstract:

An isochronal annealing in the 100-1200 oC temperature range was carried out on 116 and 400 keV electron irradiated Al-doped 6H-SiC epitaxial layers. Electrical characterization of the epilayers, performed by Fourier-Transform Deep Level Transient Spectroscopy, revealed the presence of six levels in the band gap, in the 0.1-1.6 eV energy range. Their nature is discussed in the light of previous experimental and theoretical works found in the literature.