Electrically Active Defects in Electron Irradiated P-Type 6H-SiC

Abstract:

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An isochronal annealing in the 100-1200 oC temperature range was carried out on 116 and 400 keV electron irradiated Al-doped 6H-SiC epitaxial layers. Electrical characterization of the epilayers, performed by Fourier-Transform Deep Level Transient Spectroscopy, revealed the presence of six levels in the band gap, in the 0.1-1.6 eV energy range. Their nature is discussed in the light of previous experimental and theoretical works found in the literature.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

253-256

DOI:

10.4028/www.scientific.net/MSF.679-680.253

Citation:

G. Alfieri and T. Kimoto, "Electrically Active Defects in Electron Irradiated P-Type 6H-SiC", Materials Science Forum, Vols. 679-680, pp. 253-256, 2011

Online since:

March 2011

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Price:

$35.00

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