Enhanced Annealing of MeV Ion Implantation Damage in N-Type 4H Silicon Carbide by Thermal Oxidation

Lars S. Løvlie; Bengt Gunnar Svensson

doi:10.4028/www.scientific.net/MSF.679-680.233

Paper Titles

Complete Determination of the Local Stress Field in Epitaxial Thin Films Using Single Microstructure
p.213

Comparison between the Piezoresistive Properties of a-SiC Films Obtained by PECVD and Magnetron Sputtering
p.217

Raman Study of Bulk Mobility in 3C-SiC Heteroepitaxy
p.221

Defects in SiC: Theory
p.225

Enhanced Annealing of MeV Ion Implantation Damage in N-Type 4H Silicon Carbide by Thermal Oxidation
p.233

Using Intrinsic Defect Spectra in 4H SiC as Imbedded Thermometers in the Temperature Range from 100°C to 1500°C
p.237

Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers
p.241

Donor-Acceptor Pair Luminescence of P-Al and N-Al Pairs in 3C-SiC and the Ionization Energy of the P Donor
p.245

Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC
p.249

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Enhanced Annealing of MeV Ion Implantation Damage...

Enhanced Annealing of MeV Ion Implantation Damage in N-Type 4H Silicon Carbide by Thermal Oxidation

Abstract:

Annealing of the Z1/2 and EH6/7 has been studied by DLTS after ion implantation of MeV Si ions and subsequent annealing in either N2 or O2 at 1150 °C, in the dose range 1 - 4 × 108 Si / cm2. It is found that the annealing rate of these prominent defects is greatly enhanced after thermal oxidation, and in particular close to the surface area, due to injection of a defect species which annihilates with both Z1/2 and EH6/7. The migration part of the diffusion coefficient of the injected defect is established to be in the range 1 – 2 × 10-8 cm2/s, and the measured concentration versus depth profiles of both Z1/2 and EH6/7 are accurately simulated by a simple model.

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Silicon Carbide and Related Materials 2010

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Materials Science Forum (Volumes 679-680)

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233-236

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https://doi.org/10.4028/www.scientific.net/MSF.679-680.233

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Online since:

March 2011

Authors:

Lars S. Løvlie, Bengt Gunnar Svensson

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DLTS, EH_6/7, Ion Implantation, Z_1/2

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