Enhanced Annealing of MeV Ion Implantation Damage in N-Type 4H Silicon Carbide by Thermal Oxidation

Abstract:

Article Preview

Annealing of the Z1/2 and EH6/7 has been studied by DLTS after ion implantation of MeV Si ions and subsequent annealing in either N2 or O2 at 1150 °C, in the dose range 1 - 4 × 108 Si / cm2. It is found that the annealing rate of these prominent defects is greatly enhanced after thermal oxidation, and in particular close to the surface area, due to injection of a defect species which annihilates with both Z1/2 and EH6/7. The migration part of the diffusion coefficient of the injected defect is established to be in the range 1 – 2 × 10-8 cm2/s, and the measured concentration versus depth profiles of both Z1/2 and EH6/7 are accurately simulated by a simple model.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

233-236

DOI:

10.4028/www.scientific.net/MSF.679-680.233

Citation:

L. S. Løvlie and B. G. Svensson, "Enhanced Annealing of MeV Ion Implantation Damage in N-Type 4H Silicon Carbide by Thermal Oxidation", Materials Science Forum, Vols. 679-680, pp. 233-236, 2011

Online since:

March 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.