Enhanced Annealing of MeV Ion Implantation Damage in N-Type 4H Silicon Carbide by Thermal Oxidation
Annealing of the Z1/2 and EH6/7 has been studied by DLTS after ion implantation of MeV Si ions and subsequent annealing in either N2 or O2 at 1150 °C, in the dose range 1 - 4 × 108 Si / cm2. It is found that the annealing rate of these prominent defects is greatly enhanced after thermal oxidation, and in particular close to the surface area, due to injection of a defect species which annihilates with both Z1/2 and EH6/7. The migration part of the diffusion coefficient of the injected defect is established to be in the range 1 – 2 × 10-8 cm2/s, and the measured concentration versus depth profiles of both Z1/2 and EH6/7 are accurately simulated by a simple model.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
L. S. Løvlie and B. G. Svensson, "Enhanced Annealing of MeV Ion Implantation Damage in N-Type 4H Silicon Carbide by Thermal Oxidation", Materials Science Forum, Vols. 679-680, pp. 233-236, 2011