Propagation of Stacking Faults in 3C-SiC

Hiroyuki Nagasawa; Takamitsu Kawahara; Kuniaki Yagi; Naoki Hatta

doi:10.4028/www.scientific.net/MSF.679-680.282

Paper Titles

Formation Mechanism of Stacking Faults in PVT 4H-SiC Created by Deflection of Threading Dislocations with Burgers Vector c+a
p.269

Electrical Activity of Structural Defects in 3C-SiC
p.273

Efficient Image Segmentation for Detection of Dislocations in High Resolution Light Microscope Images of SiC Wafers
p.277

Propagation of Stacking Faults in 3C-SiC
p.282

Etch Pits on 4H-SiC Surface Produced by ClF₃ Gas
p.286

Dislocation Revelation in Highly Doped N-Type 4H-SiC by Molten KOH Etching with Na₂O₂ Additive
p.290

Dislocation Analysis in Highly Doped n-Type 4H-SiC by Using Electron Beam Induced Current and KOH+Na₂O₂ Etching
p.294

New Separation Method of Threading Dislocations in 4H-SiC Epitaxial Layer by Molten KOH Etching
p.298

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Propagation of Stacking Faults in 3C-SiC

Propagation of Stacking Faults in 3C-SiC

Abstract:

To quantitatively evaluate the efficacy of stacking fault (SF) reduction methods, Monte Carlo simulations are carried out to reveal the SF distribution on a 3C–SiC (001) surface. SF density decreases with increasing epitaxial layer thickness and reducing size of the substrates. Additionally, SF density depends on interactions between adjoining SFs: annihilation of counter SF-pairs or termination of orthogonal SF-pairs. However, the SF is not entirely eliminated when growth occurs on undulant-Si or switchback epitaxy due to “spontaneous SF collimation”. The simulation shows that effective SF reduction methods, those that enhance the SF termination or annihilation, can theoretically attain the SF density on 3C–SiC (001) below 100 cm-1.

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Materials Science Forum (Volumes 679-680)

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282-285

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.282

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Online since:

March 2011

Authors:

Hiroyuki Nagasawa, Takamitsu Kawahara, Kuniaki Yagi, Naoki Hatta

Keywords:

3C-SiC, Annihilation, Epitaxy, Monte-Carlo Simulation, Stacking Fault, Undulation

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