New Separation Method of Threading Dislocations in 4H-SiC Epitaxial Layer by Molten KOH Etching

Abstract:

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A new method for the separation of threading screw dislocations (TSD) and threading edge dislocations (TED) in a 4H-SiC epitaxial layer is proposed by measurement of the etch pit angles. The etch pit angles of the TSDs and TEDs were 28±3 and 18±3°, respectively. In the case of etch pit depths within the epitaxial layer, the values were almost constant. Almost all of the TSDs were converted from basal plane dislocations (BPDs) at the epitaxial layer/substrate interface.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

298-301

DOI:

10.4028/www.scientific.net/MSF.679-680.298

Citation:

T. Katsuno et al., "New Separation Method of Threading Dislocations in 4H-SiC Epitaxial Layer by Molten KOH Etching", Materials Science Forum, Vols. 679-680, pp. 298-301, 2011

Online since:

March 2011

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Price:

$35.00

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