New Separation Method of Threading Dislocations in 4H-SiC Epitaxial Layer by Molten KOH Etching

T. Katsuno; Y. Watanabe; Fujiwara Hirokazu; Masaki Konishi; Takeo Yamamoto; Takeshi Endo

doi:10.4028/www.scientific.net/MSF.679-680.298

Paper Titles

Propagation of Stacking Faults in 3C-SiC
p.282

Etch Pits on 4H-SiC Surface Produced by ClF₃ Gas
p.286

Dislocation Revelation in Highly Doped N-Type 4H-SiC by Molten KOH Etching with Na₂O₂ Additive
p.290

Dislocation Analysis in Highly Doped n-Type 4H-SiC by Using Electron Beam Induced Current and KOH+Na₂O₂ Etching
p.294

New Separation Method of Threading Dislocations in 4H-SiC Epitaxial Layer by Molten KOH Etching
p.298

Impact of Carrier Lifetimes on Non-Destructive Mapping of Dislocations in 4H-SiC Epilayers
p.302

Correlation between Thermal Stress and Formation of Interfacial Dislocations during 4H-SiC Epitaxy and Thermal Annealing
p.306

Investigation of Photoluminescence Emission of Basal Plane Frank-Type Defects in 4H-SiC Epilayers
p.310

Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers
p.314

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680New Separation Method of Threading Dislocations in...

New Separation Method of Threading Dislocations in 4H-SiC Epitaxial Layer by Molten KOH Etching

Abstract:

A new method for the separation of threading screw dislocations (TSD) and threading edge dislocations (TED) in a 4H-SiC epitaxial layer is proposed by measurement of the etch pit angles. The etch pit angles of the TSDs and TEDs were 28±3 and 18±3°, respectively. In the case of etch pit depths within the epitaxial layer, the values were almost constant. Almost all of the TSDs were converted from basal plane dislocations (BPDs) at the epitaxial layer/substrate interface.