Correlation between Thermal Stress and Formation of Interfacial Dislocations during 4H-SiC Epitaxy and Thermal Annealing

Xuan Zhang; Masahiro Nagano; Hidekazu Tsuchida

doi:10.4028/www.scientific.net/MSF.679-680.306

Paper Titles

Dislocation Revelation in Highly Doped N-Type 4H-SiC by Molten KOH Etching with Na₂O₂ Additive
p.290

Dislocation Analysis in Highly Doped n-Type 4H-SiC by Using Electron Beam Induced Current and KOH+Na₂O₂ Etching
p.294

New Separation Method of Threading Dislocations in 4H-SiC Epitaxial Layer by Molten KOH Etching
p.298

Impact of Carrier Lifetimes on Non-Destructive Mapping of Dislocations in 4H-SiC Epilayers
p.302

Correlation between Thermal Stress and Formation of Interfacial Dislocations during 4H-SiC Epitaxy and Thermal Annealing
p.306

Investigation of Photoluminescence Emission of Basal Plane Frank-Type Defects in 4H-SiC Epilayers
p.310

Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers
p.314

Understanding the Inversion-Layer Properties of the 4H-SiC/SiO₂ Interface
p.318

The Influence of Excess Nitrogen, on the Electrical Properties of the 4H-SiC/SiO₂ Interface
p.326

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Correlation between Thermal Stress and Formation...

Correlation between Thermal Stress and Formation of Interfacial Dislocations during 4H-SiC Epitaxy and Thermal Annealing

Abstract:

Interfacial dislocations are frequently observed to form during 4H-SiC epitaxy and thermal annealing. This report attempts to establish the correlation between the distribution of interfacial dislocations and the thermal stress induced by a radial temperature gradient. In addition, it is argued that they are misfit dislocations formed by the interaction between thermal strain and misfit strain.

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Materials Science Forum (Volumes 679-680)

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306-309

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https://doi.org/10.4028/www.scientific.net/MSF.679-680.306

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March 2011

Authors:

Xuan Zhang, Masahiro Nagano, Hidekazu Tsuchida

Keywords:

4H-SiC, Basal Plane Dislocation (BPD), Interfacial Dislocations, Misfit, Thermal Stress

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