Correlation between Thermal Stress and Formation of Interfacial Dislocations during 4H-SiC Epitaxy and Thermal Annealing
Interfacial dislocations are frequently observed to form during 4H-SiC epitaxy and thermal annealing. This report attempts to establish the correlation between the distribution of interfacial dislocations and the thermal stress induced by a radial temperature gradient. In addition, it is argued that they are misfit dislocations formed by the interaction between thermal strain and misfit strain.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
X. Zhang et al., "Correlation between Thermal Stress and Formation of Interfacial Dislocations during 4H-SiC Epitaxy and Thermal Annealing", Materials Science Forum, Vols. 679-680, pp. 306-309, 2011