Correlation between Thermal Stress and Formation of Interfacial Dislocations during 4H-SiC Epitaxy and Thermal Annealing

Abstract:

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Interfacial dislocations are frequently observed to form during 4H-SiC epitaxy and thermal annealing. This report attempts to establish the correlation between the distribution of interfacial dislocations and the thermal stress induced by a radial temperature gradient. In addition, it is argued that they are misfit dislocations formed by the interaction between thermal strain and misfit strain.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

306-309

DOI:

10.4028/www.scientific.net/MSF.679-680.306

Citation:

X. Zhang et al., "Correlation between Thermal Stress and Formation of Interfacial Dislocations during 4H-SiC Epitaxy and Thermal Annealing", Materials Science Forum, Vols. 679-680, pp. 306-309, 2011

Online since:

March 2011

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Price:

$35.00

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