Understanding the Inversion-Layer Properties of the 4H-SiC/SiO2 Interface

Abstract:

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The performance of 4H-SiC power MOSFETs is limited by the less than ideal electron inversion-layer mobility due to the poor quality of the SiC-SiO2 interface. This poor interface causes several undesirable behaviors of the electrical performance of SiC MOSFETs, including: (1) strong shifts in the threshold voltage with temperature, (2) low channel mobility and (3) strong sensitivity of the mobility to the channel doping concentration. These features are explained by a high density of interface states, the high surface electric field induced in SiC inversion layers, and the combined effectsa combination of Coulomb and surface roughness scattering.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

318-325

DOI:

10.4028/www.scientific.net/MSF.679-680.318

Citation:

K. Matocha and V. Tilak, "Understanding the Inversion-Layer Properties of the 4H-SiC/SiO2 Interface", Materials Science Forum, Vols. 679-680, pp. 318-325, 2011

Online since:

March 2011

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Price:

$35.00

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