Paper Titles

Impact of Carrier Lifetimes on Non-Destructive Mapping of Dislocations in 4H-SiC Epilayers
p.302

Correlation between Thermal Stress and Formation of Interfacial Dislocations during 4H-SiC Epitaxy and Thermal Annealing
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Investigation of Photoluminescence Emission of Basal Plane Frank-Type Defects in 4H-SiC Epilayers
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Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers
p.314

Understanding the Inversion-Layer Properties of the 4H-SiC/SiO₂ Interface
p.318

The Influence of Excess Nitrogen, on the Electrical Properties of the 4H-SiC/SiO₂ Interface
p.326

Microscopic Examination of SiO₂/4H-SiC Interfaces
p.330

Reduction in the Density of Interface States at the SiO₂/4H-SiC Interface after Dry Oxidation in the Presence of Potassium
p.334

Shallow Traps at P-Doped SiO₂/4H-SiC(0001) Interface
p.338

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Understanding the Inversion-Layer Properties of...

Understanding the Inversion-Layer Properties of the 4H-SiC/SiO₂ Interface

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Abstract:

The performance of 4H-SiC power MOSFETs is limited by the less than ideal electron inversion-layer mobility due to the poor quality of the SiC-SiO2 interface. This poor interface causes several undesirable behaviors of the electrical performance of SiC MOSFETs, including: (1) strong shifts in the threshold voltage with temperature, (2) low channel mobility and (3) strong sensitivity of the mobility to the channel doping concentration. These features are explained by a high density of interface states, the high surface electric field induced in SiC inversion layers, and the combined effectsa combination of Coulomb and surface roughness scattering.

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Silicon Carbide and Related Materials 2010

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Periodical:

Materials Science Forum (Volumes 679-680)

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318-325

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.318

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Online since:

March 2011

Authors:

Kevin Matocha, Vinayak Tilak

Keywords:

Interface, Inversion Layer Mobility, Mobility, MOSFET, Scattering Mechanism

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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