Understanding the Inversion-Layer Properties of the 4H-SiC/SiO2 Interface
The performance of 4H-SiC power MOSFETs is limited by the less than ideal electron inversion-layer mobility due to the poor quality of the SiC-SiO2 interface. This poor interface causes several undesirable behaviors of the electrical performance of SiC MOSFETs, including: (1) strong shifts in the threshold voltage with temperature, (2) low channel mobility and (3) strong sensitivity of the mobility to the channel doping concentration. These features are explained by a high density of interface states, the high surface electric field induced in SiC inversion layers, and the combined effectsa combination of Coulomb and surface roughness scattering.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
K. Matocha and V. Tilak, "Understanding the Inversion-Layer Properties of the 4H-SiC/SiO2 Interface", Materials Science Forum, Vols. 679-680, pp. 318-325, 2011