Investigation of Photoluminescence Emission of Basal Plane Frank-Type Defects in 4H-SiC Epilayers
Frank-type defects on the basal plane in thick 4H-SiC epitaxial layers converted from threading screw dislocation (TSD) have been characterized by photoluminescence (PL) spectroscopy and PL imaging microscopy. PL emission from the stacking fault (SF) and the Frank partial of the defect was obtained at ~457 nm and >700 nm at room temperature, respectively. The PL emission peaks of two other kinds of Frank-type defects were obtained, and a correspondence between the optical properties and the microscopic structures of the three kinds of defects was clarified.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
I. Kamata et al., "Investigation of Photoluminescence Emission of Basal Plane Frank-Type Defects in 4H-SiC Epilayers", Materials Science Forum, Vols. 679-680, pp. 310-313, 2011