Investigation of Photoluminescence Emission of Basal Plane Frank-Type Defects in 4H-SiC Epilayers

Isaho Kamata; Xuan Zhang; Hidekazu Tsuchida

doi:10.4028/www.scientific.net/MSF.679-680.310

Paper Titles

Dislocation Analysis in Highly Doped n-Type 4H-SiC by Using Electron Beam Induced Current and KOH+Na₂O₂ Etching
p.294

New Separation Method of Threading Dislocations in 4H-SiC Epitaxial Layer by Molten KOH Etching
p.298

Impact of Carrier Lifetimes on Non-Destructive Mapping of Dislocations in 4H-SiC Epilayers
p.302

Correlation between Thermal Stress and Formation of Interfacial Dislocations during 4H-SiC Epitaxy and Thermal Annealing
p.306

Investigation of Photoluminescence Emission of Basal Plane Frank-Type Defects in 4H-SiC Epilayers
p.310

Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers
p.314

Understanding the Inversion-Layer Properties of the 4H-SiC/SiO₂ Interface
p.318

The Influence of Excess Nitrogen, on the Electrical Properties of the 4H-SiC/SiO₂ Interface
p.326

Microscopic Examination of SiO₂/4H-SiC Interfaces
p.330

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Investigation of Photoluminescence Emission of Basal Plane Frank-Type Defects in 4H-SiC Epilayers

Abstract:

Frank-type defects on the basal plane in thick 4H-SiC epitaxial layers converted from threading screw dislocation (TSD) have been characterized by photoluminescence (PL) spectroscopy and PL imaging microscopy. PL emission from the stacking fault (SF) and the Frank partial of the defect was obtained at ~457 nm and >700 nm at room temperature, respectively. The PL emission peaks of two other kinds of Frank-type defects were obtained, and a correspondence between the optical properties and the microscopic structures of the three kinds of defects was clarified.