Reduction in the Density of Interface States at the SiO2/4H-SiC Interface after Dry Oxidation in the Presence of Potassium

Pétur Gordon Hermannsson; E.Ö. Sveinbjörnsson

doi:10.4028/www.scientific.net/MSF.679-680.334

Paper Titles

Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers
p.314

Understanding the Inversion-Layer Properties of the 4H-SiC/SiO₂ Interface
p.318

The Influence of Excess Nitrogen, on the Electrical Properties of the 4H-SiC/SiO₂ Interface
p.326

Microscopic Examination of SiO₂/4H-SiC Interfaces
p.330

Reduction in the Density of Interface States at the SiO₂/4H-SiC Interface after Dry Oxidation in the Presence of Potassium
p.334

Shallow Traps at P-Doped SiO₂/4H-SiC(0001) Interface
p.338

Investigation of Surface and Interface Morphology of Thermally Grown SiO₂ Dielectrics on 4H-SiC(0001) Substrates
p.342

Non-Nitridated Oxides: Abnormal Behaviour of N-4H-SiC/SiO₂ Capacitors at Low Temperature Caused by near Interface States
p.346

Study of the Interface Properties of TiO₂/SiO₂/SiC by Photocapacitance
p.350

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Reduction in the Density of Interface States at...

Reduction in the Density of Interface States at the SiO₂/4H-SiC Interface after Dry Oxidation in the Presence of Potassium

Abstract:

We report a strong reduction in the density of near-interface traps (NITs) at the SiO2/4H-SiC interface after dry oxidation in the presence of potassium. This is accompanied by a significant enhancement of the oxidation rate. The results are in line with recent investigations of the effect of sodium on oxidation of 4H-SiC. It is evident that both alkali metals enhance the oxidation rate of SiC and strongly influence the energy distribution of interface states.

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Materials Science Forum (Volumes 679-680)

Pages:

334-337

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.334

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Online since:

March 2011

Authors:

Pétur Gordon Hermannsson, E.Ö. Sveinbjörnsson

Keywords:

Alkali Metal, Interface State, Oxidation, Silicon Carbide (SiC)

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