Reduction in the Density of Interface States at the SiO2/4H-SiC Interface after Dry Oxidation in the Presence of Potassium
We report a strong reduction in the density of near-interface traps (NITs) at the SiO2/4H-SiC interface after dry oxidation in the presence of potassium. This is accompanied by a significant enhancement of the oxidation rate. The results are in line with recent investigations of the effect of sodium on oxidation of 4H-SiC. It is evident that both alkali metals enhance the oxidation rate of SiC and strongly influence the energy distribution of interface states.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
P. G. Hermannsson and E. Ö. Sveinbjörnsson, "Reduction in the Density of Interface States at the SiO2/4H-SiC Interface after Dry Oxidation in the Presence of Potassium", Materials Science Forum, Vols. 679-680, pp. 334-337, 2011