Silicon Carbide and Related Materials 2010

Volumes 679-680

doi: 10.4028/

Paper Title Page

Authors: Giorgio Lulli, Roberta Nipoti

Abstract: In this work under-mask penetration of Al+ ions implanted in 4H-SiC is investigated by computer simulation based on the Monte-Carlo binary...

Authors: Shinya Kotake, Hiroshi Yano, Dai Okamoto, Tomoaki Hatayama, Takashi Fuyuki

Abstract: Metal-oxide-semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) were fabricated on C-face 4H-SiC with post-oxidation...

Authors: Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida

Abstract: To understand the structure of SiC–oxide interface more in detail, we propose a profiling theory of Si and C emission into SiC layer during...

Authors: Jean Lorenzzi, Romain Esteve, Nikoletta Jegenyes, Sergey A. Reshanov, Adolf Schöner, Gabriel Ferro

Abstract: In this work we report on the growth and preparation of 3C-SiC(111) material for metal-oxide-semiconductor (MOS) application. In order to...

Authors: Sergey P. Lebedev, V.N. Petrov, I.S. Kotousova, A.A. Lavrent’ev, P.A. Dement’ev, Alexander A. Lebedev, Alexander N. Titkov

Abstract: Influence of high-vacuum annealing at temperatures in the range 1300-1400°C and residual pressure of ~10-6 Torr on the surface of 6H-SiC...

Authors: Muhammad Usman, T. Pilvi, Markku Leskelä, Adolf Schöner, Anders Hallén

Abstract: Aluminum-based high-k dielectric materials have been studied for their potential use as passivation for SiC devices....

Authors: Muneharu Kato, Yuichiro Nanen, Jun Suda, Tsunenobu Kimoto

Abstract: Post-oxidation annealing (POA) in Ar at high temperature has been performed during fabrication of 4H-SiC metal-oxide-semiconductor...

Authors: Walter Daves, A. Krauss, Martin Le-Huu, S. Kronmüller, Volker Haeublein, Anton J. Bauer, Lothar Frey

Abstract: We investigated the performance of different metallization/passivation systems for high temperature applications. The metallizations...

Authors: Denis Perrone, Sergio Ferrero, Luciano Scaltrito, Marco Naretto, Edvige Celasco, C. Fabrizio Pirri

Abstract: In this work we studied different Schottky contacts to 4H-SiC with the aim to obtain Schottky Barrier diodes (SBDs) and Junction Barrier...

Authors: Gontran Pâques, Nicolas Dheilly, Dominique Planson, Rik W. De Doncker, Sigo Scharnholz

Abstract: In this paper, we propose a graded etched junction termination extension for SiC thyristors. It has the functionality of a multiple...


Showing 101 to 110 of 200 Paper Titles