Formation of Periodic Steps on 6H-SiC (0001) Surface by Annealing in a High Vacuum

Sergey P. Lebedev; V.N. Petrov; I.S. Kotousova; A.A. Lavrent’ev; P.A. Dement’ev; Alexander A. Lebedev; Alexander N. Titkov

doi:10.4028/www.scientific.net/MSF.679-680.437

Paper Titles

2D Simulation of under-Mask Penetration in 4H-SiC Implanted with Al⁺ Ions
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Improved MOS Interface Properties of C-Face 4H-SiC by POCl₃ Annealing
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Theoretical Studies for Si and C Emission into SiC Layer during Oxidation
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3C-SiC MOS Based Devices: From Material Growth to Device Characterization
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Formation of Periodic Steps on 6H-SiC (0001) Surface by Annealing in a High Vacuum
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Characterization of Al-Based High-k Stacked Dielectric Layers Deposited on 4H-SiC by Atomic Layer Deposition
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Improved Characteristics of SiC MOSFETs by Post-Oxidation Annealing in Ar at High Temperature
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Comparative Study on Metallization and Passivation Materials for High Temperature Sensor Applications
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Schottky Contacts to N-Type 4H-SiC Fabricated with Ti-, Mo-, Ni- and Al-Based Metallizations
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HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Formation of Periodic Steps on 6H-SiC (0001)...

Formation of Periodic Steps on 6H-SiC (0001) Surface by Annealing in a High Vacuum

Abstract:

Influence of high-vacuum annealing at temperatures in the range 1300-1400°C and residual pressure of ~10-6 Torr on the surface of 6H-SiC (0001) wafers has been studied. Auger spectroscopy and RHEED data show that the annealing conditions do not lead to any surface reconstruction of the wafers. Atomic force microscopy reveals atomically flat surface terraces separated by steps of unit-cell height (h = 1.5 nm).

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Materials Science Forum (Volumes 679-680)

Pages:

437-440

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.437

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Online since:

March 2011

Authors:

Sergey P. Lebedev, V.N. Petrov, I.S. Kotousova, A.A. Lavrent’ev, P.A. Dement’ev, Alexander A. Lebedev, Alexander N. Titkov

Keywords:

6H-SiC, Atomically Smooth Steps, High Vacuum Annealing

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