Formation of Periodic Steps on 6H-SiC (0001) Surface by Annealing in a High Vacuum

Abstract:

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Influence of high-vacuum annealing at temperatures in the range 1300-1400°C and residual pressure of ~10-6 Torr on the surface of 6H-SiC (0001) wafers has been studied. Auger spectroscopy and RHEED data show that the annealing conditions do not lead to any surface reconstruction of the wafers. Atomic force microscopy reveals atomically flat surface terraces separated by steps of unit-cell height (h = 1.5 nm).

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

437-440

DOI:

10.4028/www.scientific.net/MSF.679-680.437

Citation:

S. P. Lebedev et al., "Formation of Periodic Steps on 6H-SiC (0001) Surface by Annealing in a High Vacuum", Materials Science Forum, Vols. 679-680, pp. 437-440, 2011

Online since:

March 2011

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Price:

$35.00

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