Schottky Contacts to N-Type 4H-SiC Fabricated with Ti-, Mo-, Ni- and Al-Based Metallizations

Denis Perrone; Sergio Ferrero; Luciano Scaltrito; Marco Naretto; Edvige Celasco; C. Fabrizio Pirri

doi:10.4028/www.scientific.net/MSF.679-680.453

Paper Titles

Formation of Periodic Steps on 6H-SiC (0001) Surface by Annealing in a High Vacuum
p.437

Characterization of Al-Based High-k Stacked Dielectric Layers Deposited on 4H-SiC by Atomic Layer Deposition
p.441

Improved Characteristics of SiC MOSFETs by Post-Oxidation Annealing in Ar at High Temperature
p.445

Comparative Study on Metallization and Passivation Materials for High Temperature Sensor Applications
p.449

Schottky Contacts to N-Type 4H-SiC Fabricated with Ti-, Mo-, Ni- and Al-Based Metallizations
p.453

Graded Etched Junction Termination for SiC Thyristors
p.457

Improvement of Schottky Contact Characteristics by Anodic Oxidation of 4H-SiC
p.461

Toward a Better Understanding of Ni-Based Ohmic Contacts on SiC
p.465

Recovery of Ohmic Contacts Formed on C-Face 4H-SiC Following High Temperature Post-Processing
p.469

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Schottky Contacts to N-Type 4H-SiC Fabricated with...

Schottky Contacts to N-Type 4H-SiC Fabricated with Ti-, Mo-, Ni- and Al-Based Metallizations

Abstract:

In this work we studied different Schottky contacts to 4H-SiC with the aim to obtain Schottky Barrier diodes (SBDs) and Junction Barrier Schottky diodes (JBS) able to operate at high temperatures, frequencies and power densities with low power losses. Schottky contacts were fabricated using Mo and Mo/Al layers annealed up to 600 °C using a Rapid Thermal Process (RTP). A comparison with previous results obtained with Ni, Ti and Ti/Al layers annealed up to 400 °C is also proposed. The Schottky contacts were characterized by means of standard Current-Voltage (I-V) and Capacitance-Voltage (C-V) techniques. X-ray Photoelectron Spectroscopy (XPS) analyses were performed in depth profile mode in order to study the structural evolution of the interface Mo/SiC and Al/Mo during annealing treatments. Mo/Al contacts show a lower barrier height and better overall performances in forward polarization when compared to the Ti- and Ni-based contacts, and they are very promising for Schottky contact fabrication on SBD and JBS.