3C-SiC MOS Based Devices: From Material Growth to Device Characterization

Jean Lorenzzi; Romain Esteve; Nikoletta Jegenyes; Sergey A. Reshanov; Adolf Schöner; Gabriel Ferro

doi:10.4028/www.scientific.net/MSF.679-680.433

Paper Titles

Influence of Annealing Parameters on Surface Roughness, Mobility and Contact Resistance of Aluminium Implanted 4H SiC
p.417

2D Simulation of under-Mask Penetration in 4H-SiC Implanted with Al⁺ Ions
p.421

Improved MOS Interface Properties of C-Face 4H-SiC by POCl₃ Annealing
p.425

Theoretical Studies for Si and C Emission into SiC Layer during Oxidation
p.429

3C-SiC MOS Based Devices: From Material Growth to Device Characterization
p.433

Formation of Periodic Steps on 6H-SiC (0001) Surface by Annealing in a High Vacuum
p.437

Characterization of Al-Based High-k Stacked Dielectric Layers Deposited on 4H-SiC by Atomic Layer Deposition
p.441

Improved Characteristics of SiC MOSFETs by Post-Oxidation Annealing in Ar at High Temperature
p.445

Comparative Study on Metallization and Passivation Materials for High Temperature Sensor Applications
p.449

HomeMaterials Science ForumMaterials Science Forum Vols. 679-6803C-SiC MOS Based Devices: From Material Growth to...

3C-SiC MOS Based Devices: From Material Growth to Device Characterization

Abstract:

In this work we report on the growth and preparation of 3C-SiC(111) material for metal-oxide-semiconductor (MOS) application. In order to achieve reasonable material quality to prepare MOS capacitors several and crucial steps are needed: 1) heteroepitaxial growth of high quality 3C-SiC(111) layer by vapour-liquid-solid mechanism on 6H-SiC(0001) substrate, 2) surface polishing, 3) homoepitaxial re-growth by chemical vapour deposition and 4) use of an advanced oxidation process combining plasma enhanced chemical vapour deposition (PECVD) SiO2 and short post-oxidation steps in wet oxygen. Combining all these processes the interface traps density (Dit)can be drastically decreased down to 1.2  1010 eV-1cm-2 at 0.63 eV below the conduction band. To our knowledge, these values are the best ever reported for SiC material in general and 3C-SiC in particular.

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Materials Science Forum (Volumes 679-680)

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433-436

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.433

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Online since:

March 2011

Authors:

Jean Lorenzzi, Romain Esteve, Nikoletta Jegenyes, Sergey A. Reshanov, Adolf Schöner, Gabriel Ferro

Keywords:

3C-SiC, CVD, MOS, VLS Mechanism

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