Improved MOS Interface Properties of C-Face 4H-SiC by POCl3 Annealing

Shinya Kotake; Hiroshi Yano; Dai Okamoto; Tomoaki Hatayama; Takashi Fuyuki

doi:10.4028/www.scientific.net/MSF.679-680.425

Paper Titles

DLTS Measurements on 4H-SiC JBS-Diodes with Boron Implanted Local P-N Junctions
p.409

Impact of Surface Morphology on the Electrical Properties of Al/Ti Ohmic Contacts on Al-Implanted 4H-SiC
p.413

Influence of Annealing Parameters on Surface Roughness, Mobility and Contact Resistance of Aluminium Implanted 4H SiC
p.417

2D Simulation of under-Mask Penetration in 4H-SiC Implanted with Al⁺ Ions
p.421

Improved MOS Interface Properties of C-Face 4H-SiC by POCl₃ Annealing
p.425

Theoretical Studies for Si and C Emission into SiC Layer during Oxidation
p.429

3C-SiC MOS Based Devices: From Material Growth to Device Characterization
p.433

Formation of Periodic Steps on 6H-SiC (0001) Surface by Annealing in a High Vacuum
p.437

Characterization of Al-Based High-k Stacked Dielectric Layers Deposited on 4H-SiC by Atomic Layer Deposition
p.441

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Improved MOS Interface Properties of C-Face 4H-SiC...

Improved MOS Interface Properties of C-Face 4H-SiC by POCl₃ Annealing

Abstract:

Metal-oxide-semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) were fabricated on C-face 4H-SiC with post-oxidation annealing in phosphorus- containing atmosphere. POCl3/N2 annealing at 1000 °C, which is an effective condition for Si-face, did not bring any improvement in the interface state density (Dit) for C-face due to additional oxide growth. We have developed a new process sequence suitable for C-face MOS structures. As a result, the Dit near the conduction band edge was drastically decreased by the developed process to less than 3x1011 cm−2eV−1. The field-effect mobility of C-face 4H-SiC MOSFETs was effectively increased to 37 cm2/Vs. We found that the incorporation of phosphorus atoms into the SiO2/SiC interface can improve MOSFET performance not only for the Si-face but also for the C-face.

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Materials Science Forum (Volumes 679-680)

Pages:

425-428

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.425

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Online since:

March 2011

Authors:

Shinya Kotake, Hiroshi Yano, Dai Okamoto, Tomoaki Hatayama, Takashi Fuyuki

Keywords:

Carbon Face, Field-Effect Mobility, Interface State Density (D_it), MOS, POCl₃ Annealing

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