Theoretical Studies for Si and C Emission into SiC Layer during Oxidation
To understand the structure of SiC–oxide interface more in detail, we propose a profiling theory of Si and C emission into SiC layer during oxidation. Simulations of the depth profiles of Si and C interstitials results in the structures analogous with those observed from a spectroscopic ellipsometry. To determine the diffusivities of Si and C interstitials, we performed capacitance–voltage measurements for examining the re-distribution profiles of nitrogen after oxidation and compared between observed and calculated profile. The calculated nitrogen profiles showed good fits to the observed ones in the case of self-diffusivity of C interstitials magnified by several 10 times for literature value. Finally, we discuss the validity of the proposed theory.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Y. Hijikata et al., "Theoretical Studies for Si and C Emission into SiC Layer during Oxidation", Materials Science Forum, Vols. 679-680, pp. 429-432, 2011