Influence of Annealing Parameters on Surface Roughness, Mobility and Contact Resistance of Aluminium Implanted 4H SiC

Abstract:

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The impact of implantation temperature and dose as well as the annealing process with and without a graphite capping layer on surface roughness, carrier mobility and specific contact resistance are investigated and compared. The use of the capping layer is proven to be particularly advantageous: (1) a deterioration of surface roughness can be avoided even for high dose implantations and (2) the specific contact resistance is reduced. Furthermore, it is shown that a capping layer prevents surface contamination during annealing.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

417-420

DOI:

10.4028/www.scientific.net/MSF.679-680.417

Citation:

H. Schmitt et al., "Influence of Annealing Parameters on Surface Roughness, Mobility and Contact Resistance of Aluminium Implanted 4H SiC", Materials Science Forum, Vols. 679-680, pp. 417-420, 2011

Online since:

March 2011

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$35.00

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