Influence of Annealing Parameters on Surface Roughness, Mobility and Contact Resistance of Aluminium Implanted 4H SiC

H. Schmitt; Volker Haeublein; Anton J. Bauer; Lothar Frey

doi:10.4028/www.scientific.net/MSF.679-680.417

Paper Titles

Effects of Process Variations on Silicon Carbide Devices for Extreme Environments
p.401

Two-Dimensional Modeling of Aluminum-Ion Implantation into 4H-SiC
p.405

DLTS Measurements on 4H-SiC JBS-Diodes with Boron Implanted Local P-N Junctions
p.409

Impact of Surface Morphology on the Electrical Properties of Al/Ti Ohmic Contacts on Al-Implanted 4H-SiC
p.413

Influence of Annealing Parameters on Surface Roughness, Mobility and Contact Resistance of Aluminium Implanted 4H SiC
p.417

2D Simulation of under-Mask Penetration in 4H-SiC Implanted with Al⁺ Ions
p.421

Improved MOS Interface Properties of C-Face 4H-SiC by POCl₃ Annealing
p.425

Theoretical Studies for Si and C Emission into SiC Layer during Oxidation
p.429

3C-SiC MOS Based Devices: From Material Growth to Device Characterization
p.433

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Influence of Annealing Parameters on Surface...

Influence of Annealing Parameters on Surface Roughness, Mobility and Contact Resistance of Aluminium Implanted 4H SiC

Abstract:

The impact of implantation temperature and dose as well as the annealing process with and without a graphite capping layer on surface roughness, carrier mobility and specific contact resistance are investigated and compared. The use of the capping layer is proven to be particularly advantageous: (1) a deterioration of surface roughness can be avoided even for high dose implantations and (2) the specific contact resistance is reduced. Furthermore, it is shown that a capping layer prevents surface contamination during annealing.

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Materials Science Forum (Volumes 679-680)

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417-420

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.417

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Online since:

March 2011

Authors:

H. Schmitt, Volker Haeublein, Anton J. Bauer, Lothar Frey

Keywords:

Capping Layer, Carrier Mobility, Contact Resistance, Contamination, High Temperature Annealing, Ion Implantation

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