DLTS Measurements on 4H-SiC JBS-Diodes with Boron Implanted Local P-N Junctions

Abstract:

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In the present paper, 4H-SiC JBS diodes with "boron" p–n junctions have been investigated by means of deep-level transient spectroscopy (DLTS). The sign of the DLTS signal for all the 4H-SiC diodes under study, was positive. The "anomaly" of the DLTS spectra measured is apparently connected with the properties of "boron" p–n junctions. In particular, is presented the role of deep D-centers in recompensation of donors in the JBS diodes.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

409-412

DOI:

10.4028/www.scientific.net/MSF.679-680.409

Citation:

P. A. Ivanov et al., "DLTS Measurements on 4H-SiC JBS-Diodes with Boron Implanted Local P-N Junctions", Materials Science Forum, Vols. 679-680, pp. 409-412, 2011

Online since:

March 2011

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Price:

$35.00

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