DLTS Measurements on 4H-SiC JBS-Diodes with Boron Implanted Local P-N Junctions

Pavel A. Ivanov; Oleg Korolkov; Tat'yana P. Samsonova; Natalja Sleptsuk; Alexander S. Potapov; Jana Toompuu; Toomas Rang

doi:10.4028/www.scientific.net/MSF.679-680.409

Paper Titles

Improving Doping Efficiency of P⁺ Implanted Ions in 4H-SiC
p.393

Simulation of the Incomplete Ionization of the n-Type Dopant Phosphorus in 4H-SiC, Including Screening by Free Carriers
p.397

Effects of Process Variations on Silicon Carbide Devices for Extreme Environments
p.401

Two-Dimensional Modeling of Aluminum-Ion Implantation into 4H-SiC
p.405

DLTS Measurements on 4H-SiC JBS-Diodes with Boron Implanted Local P-N Junctions
p.409

Impact of Surface Morphology on the Electrical Properties of Al/Ti Ohmic Contacts on Al-Implanted 4H-SiC
p.413

Influence of Annealing Parameters on Surface Roughness, Mobility and Contact Resistance of Aluminium Implanted 4H SiC
p.417

2D Simulation of under-Mask Penetration in 4H-SiC Implanted with Al⁺ Ions
p.421

Improved MOS Interface Properties of C-Face 4H-SiC by POCl₃ Annealing
p.425

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680DLTS Measurements on 4H-SiC JBS-Diodes with Boron...

DLTS Measurements on 4H-SiC JBS-Diodes with Boron Implanted Local P-N Junctions

Abstract:

In the present paper, 4H-SiC JBS diodes with "boron" p–n junctions have been investigated by means of deep-level transient spectroscopy (DLTS). The sign of the DLTS signal for all the 4H-SiC diodes under study, was positive. The "anomaly" of the DLTS spectra measured is apparently connected with the properties of "boron" p–n junctions. In particular, is presented the role of deep D-centers in recompensation of donors in the JBS diodes.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2010

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Pages:

409-412

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.409

Citation:

Cite this paper

Online since:

March 2011

Authors:

Pavel A. Ivanov, Oleg Korolkov, Tat'yana P. Samsonova, Natalja Sleptsuk, Alexander S. Potapov, Jana Toompuu, Toomas Rang

Keywords:

Deep Level, DLTS Measurements, Junction Barrier Schottky (JBS) Diode

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] P. A. Ivanov, I. V. Grekhov, A. S. Potapov, N. D. Il'inskaya, T. P. Samsonova, O. I. Kon'kov. Semiconductors, Vol. 43, p.1209 (2009).

Google Scholar

[2] M. K. Linnarsson, M. S. Janson, A. Schöner, B. G. Svensson. Mat. Res. Soc. Symp. Proc., Vol. 742, K6. 1. 1 (2003).

Google Scholar

[3] M. S. Janson, M. K. Linnarsson, A. Hallen, B. G. Svensson, H. Bleichner. Appl. Phys. Lett., Vol. 76, No. 11, p.1434–1436 (2000).

Google Scholar

[4] S. W. Huh, J. J. Sumakeris, A. Y. Polyakov, M. Skowronski, P. B. Klein, B. V. Shanabrook, M. J. O'Loughlin. Materials Science Forum, Vol. 527–529, p.493–493 (2006).

DOI: 10.4028/www.scientific.net/msf.527-529.493

Google Scholar