DLTS Measurements on 4H-SiC JBS-Diodes with Boron Implanted Local P-N Junctions
In the present paper, 4H-SiC JBS diodes with "boron" p–n junctions have been investigated by means of deep-level transient spectroscopy (DLTS). The sign of the DLTS signal for all the 4H-SiC diodes under study, was positive. The "anomaly" of the DLTS spectra measured is apparently connected with the properties of "boron" p–n junctions. In particular, is presented the role of deep D-centers in recompensation of donors in the JBS diodes.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
P. A. Ivanov et al., "DLTS Measurements on 4H-SiC JBS-Diodes with Boron Implanted Local P-N Junctions", Materials Science Forum, Vols. 679-680, pp. 409-412, 2011