Silicon Carbide and Related Materials 2010

Volumes 679-680

doi: 10.4028/

Paper Title Page

Authors: Alexey V. Vert, Stanislav I. Soloviev, Peter M. Sandvik

Abstract: We present overview of achieved results on 4H-SiC avalanche photodiodes (APDs) and arrays. Cost-effective solar-blind optical filter allows...

Authors: Rupert C. Stevens, Konstantin Vassilevski, John E. Lees, Nicolas G. Wright, Alton B. Horsfall

Abstract: Detectors capable of withstanding high radiation environments for prolonged periods of exposure are essential for the monitoring of nuclear...

Authors: D. Kurt Gaskill, Jun Hu, X. Xin, Jian H. Zhao, Brenda L. VanMil, Rachael L. Myers-Ward, Charles R. Eddy

Abstract: The effects of proton irradiation on uv 4H-SiC single photon avalanche photodiodes (SPADs) are reported. The SPADs, grown by chemical vapor...

Authors: Konstantin Vassilevski, Irina P. Nikitina, Alton B. Horsfall, Nicolas G. Wright, C. Mark Johnson

Abstract: 3.3 kV rated 4H-SiC diodes with nickel monosilicide Schottky contacts and 2-zone JTE regions were fabricated on commercial epitaxial wafers...

Authors: Koji Nakayama, Ryosuke Ishii, Katsunori Asano, Tetsuya Miyazawa, Hidekazu Tsuchida

Abstract: Zener voltages of the fabricated SiC Zener diodes with various nitrogen concentrations in the range from 7×1017 to 5×1019 cm-3 are 17 to 87...

Authors: Stéphane Biondo, Wilfried Vervisch, Laurent Ottaviani, Olivier Palais

Abstract: This paper focuses on UV-photodetector simulation. The calculus method description and the physical equations which occur in this model are...

Authors: Duy Minh Nguyen, Gontran Pâques, Nicolas Dheilly, Christophe Raynaud, Dominique Tournier, Jens Peter Konrath, Sigo Scharnholz, Dominique Planson

Abstract: Avalanche diodes have been fabricated on 4H-SiC substrate. These diodes show an abrupt avalanche voltage of about 59 V which corresponds to...

Authors: Bernd Zippelius, Michael Krieger, Heiko B. Weber, Gerhard Pensl, Hiroyuki Nagasawa, Takamitsu Kawahara, Naoki Hatta, Kuniaki Yagi, Hidetsugu Uchida, Motoki Kobayashi

Abstract: The dependence of the reverse current of 3C-SiC p+-n diodes on the temperature and on the reverse bias is measured and a model based on...

Authors: Gheorghe Brezeanu, Florin Draghici, F. Craciunioiu, C. Boianceanu, F. Bernea, F. Udrea, D. Puscasu, Ion Rusu

Abstract: 4H-SiC Schottky Barrier Diodes (SBDs) with remarkable electrical performance have been fabricated and characterised. A barrier height about...

Authors: Philip G. Neudeck, Norman F. Prokop, Lawrence C. Greer III, Liang Yu Chen, Michael J. Krasowski

Abstract: This paper reports long-term electrical results from two 6H-SiC junction field effect transistors (JFETs) presently being tested in Low...


Showing 131 to 140 of 200 Paper Titles