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Low Earth Orbit Space Environment Testing of Extreme Temperature 6H-SiC JFETs on the International Space Station

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Abstract:

This paper reports long-term electrical results from two 6H-SiC junction field effect transistors (JFETs) presently being tested in Low Earth Orbit (LEO) space environment on the outside of the International Space Station (ISS). The JFETs have demonstrated excellent functionality and stability through 4600 hours of LEO space deployment. Observed changes in measured device characteristics tracked changes in measured temperature, consistent with well-known JFET temperature-dependent device physics.

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Periodical:

Materials Science Forum (Volumes 679-680)

Pages:

579-582

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.579

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Online since:

March 2011

Authors:

Philip G. Neudeck, Norman F. Prokop, Lawrence C. Greer III, Liang Yu Chen, Michael J. Krasowski

Keywords:

6H-SiC, International Space Station (ISS), Junction Field Effect Transistor (JFET), Low Earth Orbit

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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References

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