Low Switching Energy 1200V Normally-Off SiC VJFET Power Modules
This work presents the progress in developing an all SiC based power module for use in high frequency and high efficiency applications. Using parallel combinations of 1200V enhancement mode SiC VJFETs (36mm2) and Schottky diodes (23mm2), a total on-resistance of only 10mOhm (2.7m-cm2) was achieved at ID=100A in a commercially available standard module configured as a half-bridge circuit. Careful attention to module layout, gate driver design, and the addition of optimized snubbers resulted in excellent switching waveforms with low total switching losses of 1.25mJ when switching 100A at 150oC.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
D. C. Sheridan et al., "Low Switching Energy 1200V Normally-Off SiC VJFET Power Modules", Materials Science Forum, Vols. 679-680, pp. 583-586, 2011