Low Switching Energy 1200V Normally-Off SiC VJFET Power Modules

Abstract:

Article Preview

This work presents the progress in developing an all SiC based power module for use in high frequency and high efficiency applications. Using parallel combinations of 1200V enhancement mode SiC VJFETs (36mm2) and Schottky diodes (23mm2), a total on-resistance of only 10mOhm (2.7m-cm2) was achieved at ID=100A in a commercially available standard module configured as a half-bridge circuit. Careful attention to module layout, gate driver design, and the addition of optimized snubbers resulted in excellent switching waveforms with low total switching losses of 1.25mJ when switching 100A at 150oC.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

583-586

DOI:

10.4028/www.scientific.net/MSF.679-680.583

Citation:

D. C. Sheridan et al., "Low Switching Energy 1200V Normally-Off SiC VJFET Power Modules", Materials Science Forum, Vols. 679-680, pp. 583-586, 2011

Online since:

March 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.