Thermally-Assisted Tunneling Model for 3C-SiC p+-n Diodes

Bernd Zippelius; M. Krieger; Heiko B. Weber; Gerhard Pensl; Hiroyuki Nagasawa; Takamitsu Kawahara; Naoki Hatta; Kuniaki Yagi; Hidetsugu Uchida; Motoki Kobayashi

doi:10.4028/www.scientific.net/MSF.679-680.571

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HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Thermally-Assisted Tunneling Model for 3C-SiC p+-n...

Thermally-Assisted Tunneling Model for 3C-SiC p⁺-n Diodes

Abstract:

The dependence of the reverse current of 3C-SiC p+-n diodes on the temperature and on the reverse bias is measured and a model based on thermally-assisted tunneling is proposed to explain the dominating mechanism responsible for the leakage current. Taking into account an additional ohmic shunt resistance, the experimental reverse characteristics and thermal barrier heights B can sufficiently be reproduced.