Thermally-Assisted Tunneling Model for 3C-SiC p+-n Diodes
The dependence of the reverse current of 3C-SiC p+-n diodes on the temperature and on the reverse bias is measured and a model based on thermally-assisted tunneling is proposed to explain the dominating mechanism responsible for the leakage current. Taking into account an additional ohmic shunt resistance, the experimental reverse characteristics and thermal barrier heights B can sufficiently be reproduced.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
B. Zippelius et al., "Thermally-Assisted Tunneling Model for 3C-SiC p+-n Diodes", Materials Science Forum, Vols. 679-680, pp. 571-574, 2011