Thermally-Assisted Tunneling Model for 3C-SiC p+-n Diodes

Abstract:

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The dependence of the reverse current of 3C-SiC p+-n diodes on the temperature and on the reverse bias is measured and a model based on thermally-assisted tunneling is proposed to explain the dominating mechanism responsible for the leakage current. Taking into account an additional ohmic shunt resistance, the experimental reverse characteristics and thermal barrier heights B can sufficiently be reproduced.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

571-574

DOI:

10.4028/www.scientific.net/MSF.679-680.571

Citation:

B. Zippelius et al., "Thermally-Assisted Tunneling Model for 3C-SiC p+-n Diodes", Materials Science Forum, Vols. 679-680, pp. 571-574, 2011

Online since:

March 2011

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Price:

$35.00

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