1200V SiC JFET in Cascode Light Configuration: Comparison versus Si and SiC Based Switches

Abstract:

A 1200 V SiC JFET has been demonstrated to achieve ultra-low switching losses ten times lower than for industrial grade 1200V Si IGBT. The low switching losses are also shown to compete with the fastest 600V class MOSFET in the market, yielding 1.1% higher PFC stage efficiency for 340 kHz switching frequency, when same device on-resistances were measured. The proposed normally-on JFET also differentiates over the IGBT by its purely Ohmic output characteristics without any voltage threshold, and by a monolithically integrated body diode with practically zero reverse recovery. In this paper we outline as well how the other pre-requisites for a 1200 V SiC switch in applications such as photovoltaic systems and UPS can be fulfilled by the proposed JFET solution: long-term reliability, product cost optimization by low specific on-resistance combined with reasonable process window expectations. Finally, a normally-off like safe operation behavior is ensured by a dedicated driving scheme utilizing a low-voltage Si MOSFET as protection device at system start-up and for system failure conditions.

• Periodical: Materials Science Forum (Volumes 679-680)
• Pages: 587-590
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.679-680.587
• Online since: March 2011
• Authors: Fanny Björk, Michael Treu, Jochen Hilsenbeck, M.A. Kutschak, Daniel Domes, Roland Rupp
• Keywords: Body Diode, Free-Wheeling Diode, FWD, Normally-On JFET, SiC Transistor

References

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