Instability of 4H-SiC MOSFET Characteristics due to Interface Traps with Long Time Constants

Hiroshi Yano; Yuki Oshiro; Dai Okamoto; Tomoaki Hatayama; Takashi Fuyuki

doi:10.4028/www.scientific.net/MSF.679-680.603

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HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Instability of 4H-SiC MOSFET Characteristics due...

Instability of 4H-SiC MOSFET Characteristics due to Interface Traps with Long Time Constants

Abstract:

Instability of metal-oxide-semiconductor field-effect transistor (MOSFET) characteristics was evaluated by DC and pulse current-voltage (I-V) measurements. MOSFETs with nirided gate oxides were fabricated on C-face 4H-SiC. Their interfaces have near interface traps (NITs) with long time constants, depending on the cooling down process after nitridation. Such devices exhibited a large hysteresis in DC I-V and a large transient current in pulse I-V measurements. These phenomena can be explained by the charge state of NITs due to capture/emission of electrons in the channel.

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Periodical:

Materials Science Forum (Volumes 679-680)

Pages:

603-606

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.603

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Online since:

March 2011

Authors:

Hiroshi Yano, Yuki Oshiro, Dai Okamoto, Tomoaki Hatayama, Takashi Fuyuki

Keywords:

C-Face, Hysteresis, Instability, MOSFET, Near Interface Traps, Nitridation, Pulse I-V, Threshold Voltage

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