Study of Mobility Limiting Mechanisms in (0001) 4H and 6H-SiC MOSFETs

Harsh Naik; T. Paul Chow

doi:10.4028/www.scientific.net/MSF.679-680.595

Paper Titles

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Study of Mobility Limiting Mechanisms in (0001) 4H and 6H-SiC MOSFETs
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High-Temperature Reliability of SiC Power MOSFETs
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HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Study of Mobility Limiting Mechanisms in (0001) 4H...

Study of Mobility Limiting Mechanisms in (0001) 4H and 6H-SiC MOSFETs

Abstract:

To study the mobility limiting mechanisms in (0001) 4H-SiC and 6H-SiC MOSFETs, physics based modeling of the inversion mobility of has been done. Two very different limiting mechanisms have been found for 4H-SiC and 6H-SiC MOSFETs. The mobility in 6H-SiC MOSFETs is limited by phonon scattering while the 4H-SiC MOSFET mobility is limited by Coulombic at low electric fields and surface roughness scattering at high electric fields.

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Materials Science Forum (Volumes 679-680)

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595-598

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https://doi.org/10.4028/www.scientific.net/MSF.679-680.595

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March 2011

Authors:

Harsh Naik, T. Paul Chow

Keywords:

4H-SiC, 6H-SiC, Mobility Scattering Mechanisms, MOSFET, SiC-SiO₂ Interface

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References

[1] S. Harada, M. Okamoto, T. Yatsuo, K. Adachi, K. Fukuda, and K. Arai, IEEE Electron Device Letters, Vol. 25 (2004), p.292.

Google Scholar

[2] S. -H. Ryu, S. Krishnaswami, M. Das, B. Hull, J. Richmond, B. Heath,A. Agarwal, J. Palmour, and J. Scofield, in Proc. ISPSD, 2005, p.275.

Google Scholar

[3] H. Yano, F. Katafuchi, T. Kimoto, and H. Matsunami, IEEE Trans. Electron Devices, Vol. 46(1999), p.504.

Google Scholar

[4] R. Schorner, P. Friedrichs, D. Peters, and D. Stephani, IEEE Electron Device Lett., vol. 20, p.241–244, May (1999).

Google Scholar

[5] N.S. Saks and A.K. Agarwal, Appl. Phys. Lett., vol. 77, pp.3281-3283, Nov. (2000).

Google Scholar

[6] Y. Wang, K. Tang, T. Khan, M. Koushik Balasubramanian, H. Naik, W. Wang, and T.P. Chow, IEEE Trans. Electron Devices, Vol. 55(2008), p. (2046).

DOI: 10.1109/ted.2008.926674

Google Scholar

[7] G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, R. K. Chanana, R. A. Weller, S. T. Pantelides, L. C. Feldman, O. W. Holland, M. K. Das, and J. W. Palmour, IEEE Electron Device Letters, Vol. 22 (2001), p.176.

DOI: 10.1109/55.915604

Google Scholar

[8] C. Lombardi, S. Manzini, A. Saporito and M. Vanzi, IEEE Trans. On Computer Aided Design, vol. 7, pp.1164-1171, Nov. (1988).

DOI: 10.1109/43.9186

Google Scholar

[9] S. K. Powell, N. Goldsman, J. M. McGarrity, J. Bernstein, C. J. Scozzie, and A. Lelis, J. Appl. Phys., vol. 92, 7, p.4053–4061, Oct. (2002).

Google Scholar

[10] S. Potbhare, N. Goldsman, G. Pennington, A. Lelis and J. McGarrity, J. Appl. Phys., vol. 100, p.044515, Aug. (2006).

Google Scholar

[11] V. Tilak, K. Matocha and G. Dunne, proceedings of ICSCRM 2009, Nuremberg, Germany.

Google Scholar

[12] H. Naik and T.P. Chow, submitted to ECSCRM 2010 `.

Google Scholar