1.4kV Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)

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1.2 mm × 1.2 mm and 2.7 mm × 2.7 mm silicon carbide double-implanted metal-oxide-semiconductor field-effect transistors (DIMOSFETs) were fabricated on 4H-SiC (000-1) carbon face. 1.2 mm × 1.2 mm DIMOSFETs were characterized from room temperature to 150°C. At room temperature, the specific on-resistance of this MOSFET was 5.7 mΩcm2 at a gate bias of 20 V and a drain voltage of 1.0 V. The blocking voltage of this MOSFET was 1450 V based on the avalanche current. At 150 °C, the specific on-resistance increased from 5.7 mΩcm2 to 9.1 mΩcm2 and the threshold voltage decreased from 4.9 V to 4.1 V. The blocking voltage increased from 1450V to 1500V. 2.7 mm × 2.7 mm DIMOSFETs were also characterized at room temperature. They showed a specific on-resistance of 8.0 mΩcm2 at a gate bias of 20 V and a drain voltage of 1 V. The blocking voltage of this device was 1550 V, which was determined by the avalanche current. The time-zero dielectric breakdown (TZDB) and time-dependent dielectric breakdown (TDDB) characteristics of 180 μm × 180 μm MOS capacitor were estimated. At room temperature (RT), TZDB was 9.3 MV/cm and the charge to breakdown value of 63% cumulative failure (Qbd) was 72 C/cm2. The temperature dependence of Qbd measurements showed that it deceased from 72 C/cm2 at RT to 14 C/cm2 at 250 °C. Switching characteristics of 1.2 mm × 1.2 mm DIMOSFETs were obtained by the double-pulse measurements. The turn-on time and the turn-off time were 36 nsec and 53 nsec, respectively.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

607-612

DOI:

10.4028/www.scientific.net/MSF.679-680.607

Citation:

H. Kono et al., "1.4kV Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)", Materials Science Forum, Vols. 679-680, pp. 607-612, 2011

Online since:

March 2011

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$35.00

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