Schottky Barrier 3C-SiC Nanowire Field Effect Transistor

Konstantinos Rogdakis; Edwige Bano; Laurent Montes; Mikhael Bechelany; David Cornu; Konstantinos Zekentes

doi:10.4028/www.scientific.net/MSF.679-680.613

Paper Titles

Study of Mobility Limiting Mechanisms in (0001) 4H and 6H-SiC MOSFETs
p.595

High-Temperature Reliability of SiC Power MOSFETs
p.599

Instability of 4H-SiC MOSFET Characteristics due to Interface Traps with Long Time Constants
p.603

1.4kV Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)
p.607

Schottky Barrier 3C-SiC Nanowire Field Effect Transistor
p.613

Design and Yield of 9 kV Unipolar Normally-ON Vertical-Channel SiC JFETs
p.617

Numerical Simulations of a 4H-SiC BMFET Power Transistor with Normally-Off Characteristics
p.621

Optically Triggered Power Switch Based on 4H-SiC Vertical JFET
p.625

Optimization of SiC MESFET for High Power and High Frequency Applications
p.629

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Schottky Barrier 3C-SiC Nanowire Field Effect...

Schottky Barrier 3C-SiC Nanowire Field Effect Transistor

Abstract:

Back-gated field effect transistors (FETs) based on catalyst-free grown 3C-SiC nanowire (NW) were fabricated. Devices with rectifying Source (S) and Drain (D) contacts have been observed. In contrast with the ohmic-like devices reported in the literature, the Schottky contact barrier (SB) at S/ D regions acts beneficially for the FET performance by suppressing the off-current. At high positive gate voltages (>10 V), the Schottky barriers tend to be more transparent leading to ION/IOFF ratio equal to ~ 103 in contrast to the weak gating effect of the ohmic-contacted 3C-SiC NWFETs.

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Materials Science Forum (Volumes 679-680)

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613-616

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https://doi.org/10.4028/www.scientific.net/MSF.679-680.613

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March 2011

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Konstantinos Rogdakis, Edwige Bano, Laurent Montes, Mikhael Bechelany, David Cornu, Konstantinos Zekentes

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References

[1] J. Appenzeller, J. Knoch, M. T. Björk, H. Riel, H. Schmid and W. Riess, IEEE Trans on Electron Dev 55, 2827 (2008).

DOI: 10.1109/ted.2008.2008011

Google Scholar

[2] S. Perisanu, P. Vincent, A. Ayari, M. Choueib, S. T. Purcell, M. Bechelany and D. Cornu, Appl. Phys. Lett. 90, 043113 (2007).

DOI: 10.1063/1.2432257

Google Scholar

[3] Q. Zhao, S. Feng, Y. Zhu, X. Xu, X. Zhang, X. Song, J. Xu, L. Chen and D. Yu, Nanotechnology 17 S351, (2006).

Google Scholar

[4] X. T. Zhou, R. Q. Zhang, H. Y. Peng, N. G. Shang, N. Wang, I. Bello, C. S. Lee, S. T. Lee, Chem. Phys. Lett. 332, 215, (2000).

Google Scholar

[5] G. W. Meng, Z. Cui, L. D. Zhang, F. Philipp, J. Cryst. Growth 209, 801, (2000).

Google Scholar

[6] M. Bechelany, A. Brioude, P. Stadelmann, G. Ferro, D. Cornu, and P. Miele, Adv. Funct. Mater. 17, 3251 (2007).

DOI: 10.1002/adfm.200700110

Google Scholar

[7] K. Rogdakis, S. Y. Lee, M. Bescond, S. K. Lee, E. Bano and K. Zekentes, IEEE Trans on Elec. Dev. 55 , 1970, (2008).

Google Scholar

[8] C. Lu, L. An, Q. Fu, J. Liua, H. Zhang and J. Murduck, Appl. Phys. Lett. 88, 133501, (2006).

Google Scholar

[9] J. M. Larson and J. P Snyder, IEEE Tran. On Elec. Dev. 53, p.1048, (2006).

Google Scholar