Schottky Barrier 3C-SiC Nanowire Field Effect Transistor

Abstract:

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Back-gated field effect transistors (FETs) based on catalyst-free grown 3C-SiC nanowire (NW) were fabricated. Devices with rectifying Source (S) and Drain (D) contacts have been observed. In contrast with the ohmic-like devices reported in the literature, the Schottky contact barrier (SB) at S/ D regions acts beneficially for the FET performance by suppressing the off-current. At high positive gate voltages (>10 V), the Schottky barriers tend to be more transparent leading to ION/IOFF ratio equal to ~ 103 in contrast to the weak gating effect of the ohmic-contacted 3C-SiC NWFETs.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

613-616

DOI:

10.4028/www.scientific.net/MSF.679-680.613

Citation:

K. Rogdakis et al., "Schottky Barrier 3C-SiC Nanowire Field Effect Transistor", Materials Science Forum, Vols. 679-680, pp. 613-616, 2011

Online since:

March 2011

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Price:

$35.00

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