Optimization of SiC MESFET for High Power and High Frequency Applications

Niclas Ejebjörk; Herbert Zirath; Peder Bergman; Björn Magnusson; Niklas Rorsman

doi:10.4028/www.scientific.net/MSF.679-680.629

Paper Titles

Schottky Barrier 3C-SiC Nanowire Field Effect Transistor
p.613

Design and Yield of 9 kV Unipolar Normally-ON Vertical-Channel SiC JFETs
p.617

Numerical Simulations of a 4H-SiC BMFET Power Transistor with Normally-Off Characteristics
p.621

Optically Triggered Power Switch Based on 4H-SiC Vertical JFET
p.625

Optimization of SiC MESFET for High Power and High Frequency Applications
p.629

1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation
p.633

4kV Silicon Carbide MOSFETs
p.637

A Comparison of 1200 V Normally-OFF & Normally-on Vertical Trench SiC Power JFET Devices
p.641

3C-SiC MOSFET with High Channel Mobility and CVD Gate Oxide
p.645

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Optimization of SiC MESFET for High Power and High...

Optimization of SiC MESFET for High Power and High Frequency Applications

Abstract:

SiC MESFETs were scaled both laterally and vertically to optimize high frequency and high power performance. Two types of epi-stacks of SiC MESFETs were fabricated and measured. The first type has a doping of 3×1017 cm-3 in the channel and the second type has higher doping (5×1017 cm-3) in the channel. The higher doping allows the channel to be thinner for the same current density and therefore a reduction of the aspect ratio is possible. This could impede short channel effects. For the material with higher channel doping the maximum transconductance is 58 mS/mm. The maximum current gain frequency, fT, and maximum frequency of oscillation, fmax, is 9.8 GHz and 23.9 GHz, and 12.4 GHz and 28.2 GHz for the MESFET with lower doped channel and higher doping, respectively.