A Comparison of 1200 V Normally-OFF & Normally-on Vertical Trench SiC Power JFET Devices

Jeff B. Casady; David C. Sheridan; Robin L. Kelley; Volodymyr Bondarenko; Andrew Ritenour

doi:10.4028/www.scientific.net/MSF.679-680.641

Paper Titles

Optically Triggered Power Switch Based on 4H-SiC Vertical JFET
p.625

Optimization of SiC MESFET for High Power and High Frequency Applications
p.629

1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation
p.633

4kV Silicon Carbide MOSFETs
p.637

A Comparison of 1200 V Normally-OFF & Normally-on Vertical Trench SiC Power JFET Devices
p.641

3C-SiC MOSFET with High Channel Mobility and CVD Gate Oxide
p.645

Comparison of Total Losses of 1.2 kV SiC JFET and BJT in DC-DC Converter Including Gate Driver
p.649

Fabrication of P-Channel MOSFETs on 4H-SiC C-Face
p.653

Use of Vacuum as a Gate Dielectric: The SiC VacFET
p.657

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680A Comparison of 1200 V Normally-OFF & Normally-on...

A Comparison of 1200 V Normally-OFF & Normally-on Vertical Trench SiC Power JFET Devices

Abstract:

Equivalent sized (4.5 mm2 die area), 1200 V, 4H-SiC, vertical trench Junction Field Effect Transistors (JFETs) were characterized in terms of DC and switching performance. The 100 mΩ Enhancement-Mode (EM) JFET was found to have natural advantages in safe operation being normally-off, whereas the Depletion-Mode (DM) JFET was found to have advantages with ~ twice as high saturation current, less on-resistance (85 mΩ) and no gate current required in the on-state. The JFETs were found to both have radically less (five to ten times) switching energies than corresponding 1200 V Si transistors, with the DM JFET and EM JFET having EON and EOFF of only 115 µJ and 173 µJ, respectively when tested at half-rated voltage (600 V) and 12 A.