A Comparison of 1200 V Normally-OFF & Normally-on Vertical Trench SiC Power JFET Devices
Equivalent sized (4.5 mm2 die area), 1200 V, 4H-SiC, vertical trench Junction Field Effect Transistors (JFETs) were characterized in terms of DC and switching performance. The 100 mΩ Enhancement-Mode (EM) JFET was found to have natural advantages in safe operation being normally-off, whereas the Depletion-Mode (DM) JFET was found to have advantages with ~ twice as high saturation current, less on-resistance (85 mΩ) and no gate current required in the on-state. The JFETs were found to both have radically less (five to ten times) switching energies than corresponding 1200 V Si transistors, with the DM JFET and EM JFET having EON and EOFF of only 115 µJ and 173 µJ, respectively when tested at half-rated voltage (600 V) and 12 A.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
J. B. Casady et al., "A Comparison of 1200 V Normally-OFF & Normally-on Vertical Trench SiC Power JFET Devices", Materials Science Forum, Vols. 679-680, pp. 641-644, 2011