Fabrication of P-Channel MOSFETs on 4H-SiC C-Face

Abstract:

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We investigated the 4H-SiC C-face MOS interface properties around valence-band, and fabricated 4H-SiC C-face p-channel MOSFETs for the first time. For C-face p-channel MOSFETs, relatively low-temperature wet-gate-oxidation was preferable. Post-deposition-annealing for contact metal was found to degrade the C-face MOS interface around valence-band. Low-temperature (800°C) PDA in hydrogen including ambient was effective to some extent in order to suppress the degradation owing annealing. We obtained C-face p-channel MOSFET with normal FET operation by utilizing 900°C wet-gate-oxidation and 800°C PDA in He-H2 forming gas ambient.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

653-656

DOI:

10.4028/www.scientific.net/MSF.679-680.653

Citation:

M. Okamoto et al., "Fabrication of P-Channel MOSFETs on 4H-SiC C-Face", Materials Science Forum, Vols. 679-680, pp. 653-656, 2011

Online since:

March 2011

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Price:

$35.00

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