Fabrication of P-Channel MOSFETs on 4H-SiC C-Face

Mitsuo Okamoto; Miwako Iijima; Tsutomu Yatsuo; Takahiro Nagano; Kenji Fukuda; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.679-680.653

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HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Fabrication of P-Channel MOSFETs on 4H-SiC C-Face

Fabrication of P-Channel MOSFETs on 4H-SiC C-Face

Abstract:

We investigated the 4H-SiC C-face MOS interface properties around valence-band, and fabricated 4H-SiC C-face p-channel MOSFETs for the first time. For C-face p-channel MOSFETs, relatively low-temperature wet-gate-oxidation was preferable. Post-deposition-annealing for contact metal was found to degrade the C-face MOS interface around valence-band. Low-temperature (800°C) PDA in hydrogen including ambient was effective to some extent in order to suppress the degradation owing annealing. We obtained C-face p-channel MOSFET with normal FET operation by utilizing 900°C wet-gate-oxidation and 800°C PDA in He-H2 forming gas ambient.

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Materials Science Forum (Volumes 679-680)

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653-656

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.653

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Online since:

March 2011

Authors:

Mitsuo Okamoto, Miwako Iijima, Tsutomu Yatsuo, Takahiro Nagano, Kenji Fukuda, Hajime Okumura

Keywords:

C Face, CMOS, MOS Capacitor, MOS Interface, MOSFET, P-Channel, Post-Deposition-Annealing (PDA)

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