Silicon Carbide Vertical JFET with Self-Aligned Nickel Silicide Contacts

Konstantin Vassilevski; Irina P. Nikitina; Alton B. Horsfall; Nicolas G. Wright; Andrew J. Smith; C. Mark Johnson

doi:10.4028/www.scientific.net/MSF.679-680.670

Paper Titles

Fabrication of P-Channel MOSFETs on 4H-SiC C-Face
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Use of Vacuum as a Gate Dielectric: The SiC VacFET
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980 V, 33A Normally-Off 4H-SiC Buried Gate Static Induction Transistors
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Extraordinary Characteristics of 4H-SiC Trench MOSFETs on Large Off-Axis Substrates
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Silicon Carbide Vertical JFET with Self-Aligned Nickel Silicide Contacts
p.670

Characterisation of HfO₂/Si/SiC MOS Capacitors
p.674

Comparison of Inversion Electron Transport Properties of (0001) 4H and 6H-SiC MOSFETs
p.678

Pulse Current Characterization of SiC GTO Thyristors
p.682

1200 V SiC BJTs with Low V_CESAT and High Temperature Capability
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HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Silicon Carbide Vertical JFET with Self-Aligned...

Silicon Carbide Vertical JFET with Self-Aligned Nickel Silicide Contacts

Abstract:

Trenched implanted vertical JFETs (TI-VJFETs) with self-aligned gate and source contacts were fabricated on commercial 4H-SiC epitaxial wafers. Gate regions were formed by aluminium implantation through the same silicon oxide mask which was used for etching mesa-structures. Self-aligned nickel silicide source and gate contacts were formed using a silicon oxide spacer formed on mesa-structure sidewalls by anisotropic thermal oxidation of silicon carbide followed by anisotropic reactive ion etching of oxide. Fabricated normally-on 4H-SiC TI-VJFETs demonstrated low gate leakage currents and blocking voltages exceeding 200 V.

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Periodical:

Materials Science Forum (Volumes 679-680)

Pages:

670-673

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.670

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Online since:

March 2011

Authors:

Konstantin Vassilevski, Irina P. Nikitina, Alton B. Horsfall, Nicolas G. Wright, Andrew J. Smith, C. Mark Johnson

Keywords:

4H-SiC, Anisotropic Reactive Ion Etching, Implantation, Nickel Silicide, Oxidation, Self-Aligned Contacts, TI-VJFET, Vertical JFET, VJFET

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