Pulse Current Characterization of SiC GTO Thyristors

Abstract:

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With a focus on pulsed power applications, this paper presents results of the pulse current characterization of GTO thyristors developed and fabricated within a previous ISL funded project. Limited by the pulse current capability of the bonding wire connection, the devices demonstrated to handle a peak current of up to 6 kA/cm2 (about 20 µs FWHM). Pulse tests of Al wires indicate that two 50 µm wires should be sufficient to test a 1 mm2 device up to a peak current of 30 kA/cm2.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

682-685

DOI:

10.4028/www.scientific.net/MSF.679-680.682

Citation:

S. Scharnholz et al., "Pulse Current Characterization of SiC GTO Thyristors", Materials Science Forum, Vols. 679-680, pp. 682-685, 2011

Online since:

March 2011

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Price:

$35.00

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