Pulse Current Characterization of SiC GTO Thyristors

Sigo Scharnholz; Bertrand Vergne; Jens Peter Konrath; Gontran Pâques; Volker Zorngiebel

doi:10.4028/www.scientific.net/MSF.679-680.682

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HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Pulse Current Characterization of SiC GTO...

Pulse Current Characterization of SiC GTO Thyristors

Abstract:

With a focus on pulsed power applications, this paper presents results of the pulse current characterization of GTO thyristors developed and fabricated within a previous ISL funded project. Limited by the pulse current capability of the bonding wire connection, the devices demonstrated to handle a peak current of up to 6 kA/cm2 (about 20 µs FWHM). Pulse tests of Al wires indicate that two 50 µm wires should be sufficient to test a 1 mm2 device up to a peak current of 30 kA/cm2.

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Materials Science Forum (Volumes 679-680)

Pages:

682-685

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.682

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Online since:

March 2011

Authors:

Sigo Scharnholz, Bertrand Vergne, Jens Peter Konrath, Gontran Pâques, Volker Zorngiebel

Keywords:

GTO, Pulsed Power, Thyristor, Wire Bonding

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References

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