Paper Title:
Pulse Current Characterization of SiC GTO Thyristors
  Abstract

With a focus on pulsed power applications, this paper presents results of the pulse current characterization of GTO thyristors developed and fabricated within a previous ISL funded project. Limited by the pulse current capability of the bonding wire connection, the devices demonstrated to handle a peak current of up to 6 kA/cm2 (about 20 µs FWHM). Pulse tests of Al wires indicate that two 50 µm wires should be sufficient to test a 1 mm2 device up to a peak current of 30 kA/cm2.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
682-685
DOI
10.4028/www.scientific.net/MSF.679-680.682
Citation
S. Scharnholz, B. Vergne, J. P. Konrath, G. Pâques, V. Zorngiebel, "Pulse Current Characterization of SiC GTO Thyristors", Materials Science Forum, Vols. 679-680, pp. 682-685, 2011
Online since
March 2011
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Price
$35.00
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