Optical Triggering of 4H-SiC Thyristors with a 365 nm UV LED

Nicolas Dheilly; Gontran Pâques; Dominique Planson; Pascal Bevilacqua; Sigo Scharnholz

doi:10.4028/www.scientific.net/MSF.679-680.690

Paper Titles

Characterisation of HfO₂/Si/SiC MOS Capacitors
p.674

Comparison of Inversion Electron Transport Properties of (0001) 4H and 6H-SiC MOSFETs
p.678

Pulse Current Characterization of SiC GTO Thyristors
p.682

1200 V SiC BJTs with Low V_CESAT and High Temperature Capability
p.686

Optical Triggering of 4H-SiC Thyristors with a 365 nm UV LED
p.690

Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on In-House Substrate with Low Threading Dislocation Density
p.694

Improved Current Gain in 4H-SiC BJTs Passivated with Deposited Oxides Followed by Nitridation
p.698

Current Gain Degradation in 4H-SiC Power BJTs
p.702

High Voltage, Low On-Resistance 4H-SiC BJTs with Improved Junction Termination Extension
p.706

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Optical Triggering of 4H-SiC Thyristors with a 365...

Optical Triggering of 4H-SiC Thyristors with a 365 nm UV LED

Abstract:

Direct light triggering of 4H-SiC thyristors with a 365 nm UV LED was demonstrated. Two different structures with etched and non etched gate were successfully tested. The current rise time was less than 100 ns and the delay time as short as 1.5 μs. The optical energy density necessary to switch-on a thyristor has been studied for different optical power densities and bus voltages. This work shows that the UV LED technology is becoming sufficiently powerful to switch-on SiC thyristors. Thus, an alternative, less expensive and more compact gate light source than UV laser is now possible. This can be of particular interest for very high voltage and pulse power electronic applications.

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Materials Science Forum (Volumes 679-680)

Pages:

690-693

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.690

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Online since:

March 2011

Authors:

Nicolas Dheilly, Gontran Pâques, Dominique Planson, Pascal Bevilacqua, Sigo Scharnholz

Keywords:

4H-SiC, Optical Triggering, Thyristor, UV-LED

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