Comparison of Inversion Electron Transport Properties of (0001) 4H and 6H-SiC MOSFETs

Harsh Naik; T. Paul Chow

doi:10.4028/www.scientific.net/MSF.679-680.678

Paper Titles

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Silicon Carbide Vertical JFET with Self-Aligned Nickel Silicide Contacts
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Characterisation of HfO₂/Si/SiC MOS Capacitors
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HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Comparison of Inversion Electron Transport...

Comparison of Inversion Electron Transport Properties of (0001) 4H and 6H-SiC MOSFETs

Abstract:

The effect of using two different polytypes, 4H-SiC and 6H-SiC, on the performance of (0001) SiC MOSFETs has been studied. 4H-SiC and 6H-SiC MOSFETs have been fabricated with deposited gate oxides followed by oxidation in dry O2 or NO. Device parameters, particularly field-effect mobility, inversion sheet carrier concentration and Hall mobility have been extracted. We have also compared the mobility-limiting mechanisms of (0001) 4H and 6H-SiC MOSFETs and found that inversion mobility can be further improved in 4H-SiC, but not 6H-SiC.

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Materials Science Forum (Volumes 679-680)

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678-681

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https://doi.org/10.4028/www.scientific.net/MSF.679-680.678

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March 2011

Authors:

Harsh Naik, T. Paul Chow

Keywords:

4H-SiC, 6H-SiC, Hall-Effect Measurement, MOSFET, SiC-SiO₂ Interface

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