Comparison of Inversion Electron Transport Properties of (0001) 4H and 6H-SiC MOSFETs

Abstract:

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The effect of using two different polytypes, 4H-SiC and 6H-SiC, on the performance of (0001) SiC MOSFETs has been studied. 4H-SiC and 6H-SiC MOSFETs have been fabricated with deposited gate oxides followed by oxidation in dry O2 or NO. Device parameters, particularly field-effect mobility, inversion sheet carrier concentration and Hall mobility have been extracted. We have also compared the mobility-limiting mechanisms of (0001) 4H and 6H-SiC MOSFETs and found that inversion mobility can be further improved in 4H-SiC, but not 6H-SiC.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

678-681

DOI:

10.4028/www.scientific.net/MSF.679-680.678

Citation:

H. Naik and T. P. Chow, "Comparison of Inversion Electron Transport Properties of (0001) 4H and 6H-SiC MOSFETs", Materials Science Forum, Vols. 679-680, pp. 678-681, 2011

Online since:

March 2011

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$35.00

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